Abstract

DOUARA, A.; RABEHI, A.  and  BAITICHE, O.. Impact of AlN interlayer on the electronic and I-V characteristics of In_0.17Al_0.83N/GaN HEMTs devices. Rev. mex. fis. [online]. 2023, vol.69, n.3.  Epub Sep 06, 2024. ISSN 0035-001X.  https://doi.org/10.31349/revmexfis.69.031602.

Here, we study a simulation model of In0.17Al0.83N/GaN passivated high electron mobility transistors (HEMTs) on SiC substrate. The research focused systematically on the effect of AlN interlayer on the electronic and electric characteristics. The 2D-electron gas density of In0.17Al0.83N/AlN/GaN HEMTs is investigated through the dependence on various AlN layer thickness. We report calculations of I-V characteristics, with 1.5 nm AlN thickness. We find the highest maximum output current of 1.81 A/mm at Vgs = 1 V, and more than 450 mS/mm as a transconductance peak. The Results are in agreement with experimental data.

Keywords : HEMTs; AlN interlayer; 2D-electron gas.

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