, Universite Montpellier 2, place E. Bataillon, 34095 Montpellier, France, due to a memory effect specific for backscattering events.]]>
, debido al efecto de memoria específico para los eventos de retrodispersión.]]>
Classical origin for a negative magnetoresistance and for its anomalous behavior at low magnetic fields in two dimensions
Remi Jullienª, Alexander Dmitrievb, and Michel Dyakonovc
ª Laboratoire des Verves, Universite Montpellier 2, place E. Bataillon, 34095 Montpellier, France
b A. F. Ioffe Physico–Technical Institute, 194021 St. Petersburg, Russia
c Laboratoire de Physique Mathématique, Université Montpellier 2, place E. Bataillon, 34095 Montpellier, FranceLaboratoire associé au Centre National de la Recherche Scientifique (CNRS, France).
]]> Recibido el 24 de noviembre de 2003
Abstract
The classical two–dimensional problem of non–interacting electrons scattered by a static impurity potential in the presence of a magnetic field is investigated both analytically and numerically. A strong negative magnetoresistance is found, due to freely circling electrons, which are not taken into account by the Boltzmann–Drude approach. Moreover, at very low magnetic fields, the resistivity turns out to be proportional to 
, due to a memory effect specific for backscattering events.
Keywords: Magnetotransport; magnetoresistance; semiconductors.
Resumen
El problema bidimensional de electrones no interactuantes dispensados por un potencial estático en presencia de un campo magnético, se investigó tanto analítica como numéricamente. Se encuentra una fuerte magneto–resistencia negativa debida a los electrones libres circulantes, los cuales no se contemplan en la aproximación de Boltzman–Drude. Mas aún, a un campo magnético muy pequeño, la resistividad se sale de la proporcionalidad de , debido al efecto de memoria específico para los eventos de retrodispersión.
Descriptores: Magneto–transporte; magneto–resistencia; semiconductores.
]]>PACS: 05.60.+w; 73.40.–c; 73.50.Jt
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