K.F. Albertin and I. Pereyra
LME, EPUSP, University of São Paulo, CEP 5424–970, CP61548, São Paulo, SP, Brazil.
Recibido el 27 de octubre de 2004
Aceptado el 26 de mayo de 2005
Abstract
]]> Amorphous silicon thin film transistors (TFT's), utilizing silicon dioxide (SiO2), silicon oxynitride (SiOxNy) and silicon nitride (Si3N4) obtained by PECVD as gate insulating material, are fabricated through just one masking process and characterized by drain current vs drain voltage and by drain current vs gate voltage (Ids vs. Vds and Ids vs. Vgs) measurements.Keywords: One mask step; silicon oxynitride; thin film transistors.
Resumen
Son fabricados con apenas una etapa de fotolitografía transistores de capa fina de silicio amorfo utilizando, como material dieléctrico de compuerta, dióxido de silicio (SIO2), oxinitruro de silicio (SiOxNy) y nitruro de silicio (Si3N4) crecidos por PECVD. Los dispositivos son caracterizados por medio de mediciones de corriente de dreno vs voltaje de dreno y corriente de dreno vs voltaje de compuerta (Ids vs. Vds y Ids vs. Vgs)
Descriptores: fotolitográfica; oxinitruro de silicio; transistores de capa fina.
PACS: 72.80.Sk; 73.40 Qv
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]]>Acknowledgments
The authors are grateful to Dr. Marco I.A. Cháves for his helpful discussion of the results. This work was financially supported by FAPESP (Process No 00/10027–3 and 03/02837–3) and CNPq.
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