Abstract

MORALES- SANCHEZ, E.; RIVERA- RODRIGUEZ, C.; PROKHOROV, E.  and  GONZALEZ HERNANDEZ, J.. Efecto del Oxigeno en la Cristalización de Películas Delgadas de GeSbTe. Superf. vacío [online]. 2010, vol.23, n.3, pp.6-9. ISSN 1665-3521.

In this work it was developed a new material for an active layer in Reversible Optical Memories (ROM), which lets information record, using three or four levels of reflectivity at each point. This new material is based on Ge₁Sb₂Te₄ doped with oxygen. The X-ray Diffraction technique show that, for films with oxygen percentages between 2 and 8% at. in the sample and crystallized at 110° C, the crystal phase corresponds to the stoichiometric composition of Ge₁Sb₂Te₄. However, for films with an oxygen concentration greater than 10% at., the crystal phase corresponds to Sb₂Te₃. The optical properties (reflectance) of Ge₁Sb₂Te₄ films doped with oxygen were investigated, noting that the segregation of phase in films with more than 10 percent of oxygen, results in an increase in the nucleation times and in the crystallization times induced by laser, allowing the possibility of having a multilevel record i.e. memories with optical ternary or quaternary code, in place of the binary code that traditionally has been used.

Keywords : Optical memories; Phase transformation; Ge:Sb:Te-O.

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