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Revista mexicana de física
Print version ISSN 0035-001X
Abstract
SERDOUK, F.; BOUMALI, A.; MAKHLOUF, A. and BENKHEDIR, M. L.. Solutions of q-deformed multiple-trapping model for charge carrier transport from time-of-flight transient photo-current in amorphous semiconductors. Rev. mex. fis. [online]. 2020, vol.66, n.5, pp.643-655. Epub Jan 31, 2022. ISSN 0035-001X. https://doi.org/10.31349/revmexfis.66.643.
The aim of this paper is to investigate the description of the q-deformed multiple-trapping equation for charge carrier transport in amorphous semiconductors. We first modify the multiple-trapping model of charge carriers in amorphous semiconductors from time-of-flight transient photo-current in the framework of the q-derivative formalism, and then we construct our simulated current by using an approach based on the Laplace method. It is implemented in a program proposed recently by [14] which allows us to construct a current using the Padé approximation expansion. Furthermore, we study the influence of the parameter q of the q-calculus formalism on the drift mobility.
Keywords : Amorphous semiconductors; multiple-trapping model; drift mobility; Laplace technics; time-of-flight; q−deformed formalism.