Abstract

BECERRIL, M; VIGIL-GALAN, O; CONTRERAS-PUENTE, G  and  ZELAYA-ANGEL, O. Aluminum doping of CdTe polycrystalline films starting from the heterostructure CdTe/Al. Rev. mex. fis. [online]. 2011, vol.57, n.4, pp.304-308. ISSN 0035-001X.

Aluminum doped CdTe polycrystalline films were obtained from the heterostructure CdTe/Al/Corning glass. The aluminum was deposited by thermal vacuum evaporation and the CdTe by sputtering of a CdTe target. The aluminum was introduced into the lattice of the CdTe from a thermal annealed to the CdTe/Al/Corning glas heterostructure. The electrical, structural, and optical properties were analyzed as a function of the Al concentrations. It found that when Al is incorporated, the electrical resistivity drops and the carrier concentration increases. In both cases the changes are several orders of magnitude. From the results, we conclude that, using this deposition techniques, n-type Al doped CdTe polycrystalline films can be produced.

Keywords : Semiconducting II-VI materials; thin films; CdAlTe; radio frequency sputtering.

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