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Revista mexicana de física
Print version ISSN 0035-001X
Abstract
POWER, Ch. et al. Absorción óptica a altas presiones del TLGaSe2. Rev. mex. fis. [online]. 2010, vol.56, n.3, pp.217-222. ISSN 0035-001X.
In this paper the spectrum of optical normal transmission not polarized of TlGaSe2 is measured as a function of pressure up to 27.6 GPa at room temperature. Our results show that in the range of the visible exist the contributions of two direct gaps of energy, which present a linear dependence with the pressure. The weak transition assigned to the fundamental gap of energy, decreases up to 1.5 GPa with a linear coefficien of -5.31 × l0 -2 eVGPa-1 and the transition shows a coefficien of -9.95 × 10-2 eVGPa-1 up to 5.3 GPa (limit of pressure in the visible spectrum). The results in the infrared do not show the presence of the transition EA allowing to see only the behavior of the second transition rightly up to the pressure of metallization 24.6 GPa. In the range of pressure studied from 0.0 to 27.6 GPa, the transition EB shows a not linear behavior with the pressure of quadratic coefficien 1.83 × l0 -3 eVGPa -2.
Keywords : I-III-VI2 semiconductor; optical properties; infrared; high pressure.