Abstract

CASTANEDA LOPEZ, H et al. Optical properties of Er-doped GaN. Rev. mex. fis. [online]. 2007, vol.53, suppl.1, pp.9-12. ISSN 0035-001X.

Optical properties of Er (Erbium)-doped GaN epilayers have been investigated using photoluminescence (PL). Various doses of Er ions were implanted on GaN epilayers by ion implantation. Sharp visible green emission lines due to inner 4f shell transitions for Er³⁺ were observed from the PL spectrum of Er-implanted GaN. The emission spectrum consists of two narrow green lines at 537 and 558 nm. The green emission lines are identified as Er³⁺ transitions from the ⁵H_11/2 and ⁴S_3/2 levels to the ⁴I_15/2 ground state. The stronger peaks in the 5 × 10 ¹⁴ cm^-2 sample, together with the relatively higher intensity of the Er³⁺ luminescence in the lower doped sample, imply that some damage remains in the 1 × 10¹⁵ cm^-2 sample. The peak positions of emission lines due to inner 4f shell transitions for Er³⁺ do not change with increasing temperature. This indicates that Er³⁺ related emission depends very little on the ambient temperature.

Keywords : GaN; implantation; Er; photoluminescence.

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