Services on Demand
Journal
Article
Indicators
- Cited by SciELO
- Access statistics
Related links
- Similars in SciELO
Share
Revista mexicana de física
Print version ISSN 0035-001X
Abstract
PEREZ-MERCHANCANO, S.T.; BOLIVAR-MARINEZ, L.E. and SILVA-VALENCIA, J.. The binding energy of donor impurities in GaAs quantum dots under the pressure effect. Rev. mex. fis. [online]. 2007, vol.53, n.6, pp.470-474. ISSN 0035-001X.
Calculations of the binding energy of an on-center and off-center shallow hydrogenic impurity in a GaAs quantum dot under hydrostatic pressure are presented. The variational approach within the effective mass approximation is used as the framework for this calculation. The effect of the pressure is to exert an additional confinement on the impurity inside the dot; therefore the binding energy increases for any dot radius and impurity position. We also found that the binding energy depends on the location of the impurity and the pressure effects are less pronounced for impurities on the edge.
Keywords : Quantum dot; impurity; hydrostatic pressure.