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Revista mexicana de física
versión impresa ISSN 0035-001X
Resumen
ALBERTIN, K.F y PEREYRA, I. One step a-Si: H TFT'S with PECVD SiOxNy gate insulator. Rev. mex. fis. [online]. 2006, vol.52, suppl.2, pp.83-85. ISSN 0035-001X.
Amorphous silicon thin film transistors (TFT's), utilizing silicon dioxide (SiO2), silicon oxynitride (SiOxNy) and silicon nitride (Si3N4) obtained by PECVD as gate insulating material, are fabricated through just one masking process and characterized by drain current vs drain voltage and by drain current vs gate voltage (Ids vs. Vds and Ids vs. Vgs) measurements.
Palabras llave : One mask step; silicon oxynitride; thin film transistors.