Abstract

MISHURNYI, V.A.; GORBATCHEV, A. Yu.; DE ANDA, F.  and  NIETO-NAVARRO, J.. Influence of baking on the photoluminescence spectra of Ini_1-xGa_xAs_yPi_1-y solid solutions grown on Inp substrates. Rev. mex. fis. [online]. 2004, vol.50, n.3, pp.216-220. ISSN 0035-001X.

The influence of thermal treatments on the photoluminescence spectra of In_1-xGa_xAs_y P_1-y epitaxial layers of various compositions grown by LPE on InP substrates has been studied. To prevent the epitaxial layers from degradation, due to phosphor evaporation during the baking, their surface was covered by spin-on SiO₂ layers. The photoluminescence spectra did not change for solid solutions whose compositions were near InP and InGaAs. For compositions in the middle of the lattice-matched region, the variations were very noticeable because the appearance of additional peaks in the luminescence spectra. This could be related to the decomposition of those solid solutions whose compositions lie inside a theoretically predicted miscibility gap.

Keywords : InGaAsP; solid solution; miscibility gap; decomposition and photoluminescence.

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