Resumen

ALBERTIN, K.F  y  PEREYRA, I. One step a-Si: H TFT'S with PECVD SiO_xN_y gate insulator. Rev. mex. fis. [online]. 2006, vol.52, suppl.2, pp.83-85. ISSN 0035-001X.

Amorphous silicon thin film transistors (TFT's), utilizing silicon dioxide (SiO₂), silicon oxynitride (SiO_xN_y) and silicon nitride (Si₃N₄) obtained by PECVD as gate insulating material, are fabricated through just one masking process and characterized by drain current vs drain voltage and by drain current vs gate voltage (I_ds vs. V_ds and I_ds vs. V_gs) measurements.

Palabras llave : One mask step; silicon oxynitride; thin film transistors.

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