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Superficies y vacío

versión impresa ISSN 1665-3521

Superf. vacío vol.18 no.2 Ciudad de México jun. 2005



Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots

V.H. Méndez-García* 

A. Lastras-Martínez* 

A. Yu Gorbachev* 

V.A. Mishurnyi* 

F. de Anda* 

M. López-López** 

M. Calixto-Rodríguez** 

*Instituto de Investigación en Comunicación Óptica and Facultad de Ingeniería, Universidad Autónoma de San Luis Potosí, Av. Karakorum 1470, Lomas 4ª. Sección, San Luis Potosí, San Luis Potosí, México. 78210.

**Physics Department, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional. Apartado Postal 14470, México, D.F., México.


We studied the growth of self-assembled InAs quantum dots (QDs) on GaAs (100) surfaces subjected to an in-situ annealing treatment. The treatment consists in exposing the GaAs buffer layer surface at a high temperature for a few seconds with the As4-shutter closed. The exposure of GaAs at high temperature leads to the formation of nanometric scale pits plus a Ga-rich surface. The annealing modifies in such a way the GaAs surface that the strain mediated transition from two- to three -dimensional InAs growth takes place at a much larger InAs thickness than the obtained under standard conditions. Moreover, the resulting QDs obtained at the equivalent InAs thickness of 3.4 monolayers (MLs) on the annealed GaAs surfaces presented a smaller size dispersion as compared with the conventionally grown QDs. The photoluminescence (PL) emission spectra corresponding to the samples subjected to the in-situ thermal treatment observed a reduction in the full width at half medium (FWHM) and a clear correlation between the dots size increase and the emission peak red-shift. The new-flanged nucleation propitiated by the annealing process was explained in terms of a generation of an intermediated InGaAs thin film created by Ga-clusters on an atomically rough surface and the impinging In atoms.

Keywords: Nanostructures; Quantum dots; Molecular beam epitaxy; Semiconducting III-V materials

Full text available only in PDF format.


The authors would like to express their thanks to the technical staff members: N. Saucedo-Zeni, B.E. Torres-Loredo and R. Fragoso. This work was partially supported by CONACyT-Mexico, FAI-UASLP, PROMEP-SESIC.


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Received: April 01, 2005; Accepted: May 11, 2005

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