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Revista mexicana de física

versión impresa ISSN 0035-001X

Resumen

VOROBETS, M.O. Effect of pressure on the electrical properties of GaSe/InSe heterocontacts. Rev. mex. fis. [online]. 2010, vol.56, n.6, pp.441-444. ISSN 0035-001X.

Barrier structures were produced using optical contact between the indium and gallium selenides. The effect of mechanical pressure ranging from 0 to 100 kPa on the electrical properties of the GaSe/InSe heterocontacts was investigated. The data was analyzed assuming the SIS (semiconductor - insulator - semiconductor) model. Using this model we were able to explain the current - voltage dependence. It was found that the modification of heteroboundary significantly affects the electric transport.

Palabras llave : Semiconductors; heterostructures; electrical properties.

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