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Revista mexicana de física

versão impressa ISSN 0035-001X


PEYKOV, P. et al. On the field enhanced carrier generation in MOS structures. Rev. mex. fis. [online]. 2002, vol.48, n.3, pp.235-238. ISSN 0035-001X.

Using a sine voltage sweep C-V, DLTS, gettering and defect revealing techniques the thermal carrier generation in MOS (Metal - Oxide - Semiconductor) structures was investigated. The thermal generation from a field dependent becomes as field independent due to the gettering. The activation energy of generation - recombination centers, Ea, the generation lifetime, Τg, and Poole-Frenkel factor, α, were determined. Dislocations with an average density of 5 x 106cm-2 were observed in all wafers. In the samples with field enhanced carrier generation a linear dependence between Ea and α was found, where the Poole-Frenkel factor increases with the increase ofthe activation energy. On the other hand Ea, Τg and α were found to be strongly affected by the gettering, thereby suggesting that they depend on the level ofdecoration of the dislocations with impurities.

Palavras-chave : MOS; lifetime; defects; gettering.

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