Resumen

DOUARA, A.; RABEHI, A.; BAITICHE, O.  y  HAMDANI, M.. Improved electrical characteristics of Al_x Ga_1-xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters. Rev. mex. fis. [online]. 2023, vol.69, n.4, e041001.  Epub 19-Nov-2024. ISSN 0035-001X.  https://doi.org/10.31349/revmexfis.69.041001.

This research aims to study the impact of some physical and structural parameters on the I-V characteristics of a high electron mobility transistors (HEMTs) based on Al x Ga 1-x N/GaN. We investigate the effect of the GaN buffer layer thickness and the impact of other properties of the materials such as aluminum mole fraction and doping concentration, the Al0.2Ga0.8N/GaN heterostructures with 400 nm of buffer layer and a layer doped with n = 4 × 1018 cm-3, for this structure we find the maximum saturation current of 420 mA/mm. The proposed model included GaN buffer layer and Al content were derived from our developed I-V characteristics. The proposed model is in excellent agreement with the simulated I-V characteristics and experimental results.

Palabras llave : HEMTs; Al _x Ga _1-x N/GaN; buffer layer; GaN.

        · texto en Inglés     · Inglés ( pdf )