M. A. Domínguez-J.ª, P. Rosales-Q.*,ª, A. Torres-J.ª, J. Molina-R.1,ª, M. Moreno-M.ª, C. Zúñiga-I.ª, W. Calleja-Aª. and Felipe Coyotl-M.b
ª Departamento de Electrónica, Instituto Nacional de Astrofísica, Óptica y Electrónica AP 51 & 216, C.P 72000, Puebla, Pue., México. *prosales@inaoep.mx
b División de Ingenierías, Universidad Politécnica de Tulancingo Hidalgo, México, Tel/Fax: (775) 775-8202
Recibido: 27 de septiembre de 2010;
Aceptado: 16 de enero de 2011
Resumen
En este trabajo, se ha realizado la caracterización del oxido de silicio SOG (SOG-SiO2) depositado por la técnica sol-gel y recocido a 200 °C. Los resultados de la caracterización óptica y eléctrica muestran que los valores del índice de refracción (n) y de la constante dieléctrica (k) son muy cercanos a aquellos valores comúnmente reportados para el SiO2 crecido térmicamente. Nuestros resultados sugieren que el SOG-SiO2 recocido a 200 °C puede ser una alternativa para mejorar las características eléctricas de los transistores de película delgada (TFTs), entre otros dispositivos que son fabricados a bajas temperaturas.
Palabras clave: SOG-SIO2; Dieléctico de compuerta; Transistores de película delgada; Porcesos a baja temperatura.
Abstract
Currently, the flexible electronics research field is of high interest because of the development of low cost products, such as solar cells and LCDs. Low temperature deposition processes are required in order to use flexible substrates. Nevertheless, the performance of the electronic devices built at temperatures below 350 °C is not as good as in CMOS technology. Thus, physical and electrical properties of semiconductor and insulator materials deposited at these low temperatures must be improved. In this work, characterization of SiO2 annealed at 200°C has been done. The optical and electrical characterization showed that the refractive index (n) and dielectric constant (k) values are similar to those of thermally grown SiO2. As can be observed, these results suggest that this SiO2 annealing at 200°C could be an alternative to improve electrical characteristics of TFTs, among other device applications.
Keywords: SOG-SIO2, Gate dielectric; Thin film transistors; Low-temperature process.
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Nota
The Editors thank to the Physics Department of the Centro de Investigación y de Estudios Avanzados del IPN for the support in the publication of this issue, and the cooperation of M en C. Alejandra García Sotelo and Eng. Erasmo Gómez.
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