<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>1665-3521</journal-id>
<journal-title><![CDATA[Superficies y vacío]]></journal-title>
<abbrev-journal-title><![CDATA[Superf. vacío]]></abbrev-journal-title>
<issn>1665-3521</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S1665-35212005000300013</article-id>
<title-group>
<article-title xml:lang="es"><![CDATA[Estudio de las películas de paladio como barreras de difusión para contactos ohmicos en semiconductores III-V]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Galván-Arellano]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Kudriavtsev]]></surname>
<given-names><![CDATA[I.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Romero-Paredes]]></surname>
<given-names><![CDATA[G.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Peña-Sierra]]></surname>
<given-names><![CDATA[R.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Díaz-Reyes]]></surname>
<given-names><![CDATA[J.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,IPN CINVESTAV Depto. de Ing. Eléctrica]]></institution>
<addr-line><![CDATA[ México, D. F.]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,IPN CIBA ]]></institution>
<addr-line><![CDATA[Tepetitla Tlaxcala]]></addr-line>
<country>Mexico</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>00</month>
<year>2005</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>00</month>
<year>2005</year>
</pub-date>
<volume>18</volume>
<numero>3</numero>
<fpage>13</fpage>
<lpage>16</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S1665-35212005000300013&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S1665-35212005000300013&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S1665-35212005000300013&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="es"><p><![CDATA[Resumen Se reporta el desarrollo de una metodología para formar contactos ohmicos en GaSb y GaAs con barrera de difusión de paladio. Se presentan resultados del estudio de las superficies semiconductoras durante la fase de limpieza, y previo al depósito de las aleaciones metálicas de contacto. Se describe la metodología para depositar películas de Pd sobre GaSb y GaAs. Se demuestra la acción de las películas de paladio como barrera de difusión por los resultados del análisis de composición química por espectroscopia de iones secundarios (SIMS) en la estructura semiconductor/paladio/aleación-metálica.]]></p></abstract>
<abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract A method for the formation of ohmic contacts on GaSb and GaAs with a palladium diffusion barrier is reported. The results on the analysis of the semiconductor surfaces after the cleaning process and previous to the metallic film contact deposition are included. The method for the palladium film deposition on GaSb and GaAs semiconductors is reported. The capability of the palladium films as a diffusion barrier is demonstrated by the results of SIMS analysis realized by on the semiconductor/palladium-film/metallic-alloy structures.]]></p></abstract>
<kwd-group>
<kwd lng="es"><![CDATA[SIMS]]></kwd>
<kwd lng="es"><![CDATA[AFM]]></kwd>
<kwd lng="es"><![CDATA[Contactos ohmicos]]></kwd>
<kwd lng="es"><![CDATA[Paladio]]></kwd>
<kwd lng="es"><![CDATA[Barreras de difusión]]></kwd>
<kwd lng="es"><![CDATA[Semiconductores III-V]]></kwd>
<kwd lng="es"><![CDATA[GaAs]]></kwd>
<kwd lng="es"><![CDATA[GaSb]]></kwd>
<kwd lng="en"><![CDATA[SIMS]]></kwd>
<kwd lng="en"><![CDATA[AFM]]></kwd>
<kwd lng="en"><![CDATA[Ohmics contacts, Paladium, Diffusion barrier]]></kwd>
<kwd lng="en"><![CDATA[Semiconductors III-V]]></kwd>
<kwd lng="en"><![CDATA[GaAs]]></kwd>
<kwd lng="en"><![CDATA[GaSb]]></kwd>
</kwd-group>
</article-meta>
</front><back>
<ref-list>
<ref id="B1">
<label>[1]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Gambino]]></surname>
<given-names><![CDATA[J. P.]]></given-names>
</name>
<name>
<surname><![CDATA[Colgan]]></surname>
<given-names><![CDATA[E. G.]]></given-names>
</name>
</person-group>
<source><![CDATA[Mater. Chem. Phys.]]></source>
<year>1998</year>
<volume>52</volume>
<page-range>99</page-range></nlm-citation>
</ref>
<ref id="B2">
<label>[2]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Cooke]]></surname>
<given-names><![CDATA[C. J.]]></given-names>
</name>
<name>
<surname><![CDATA[Hume-Rothery]]></surname>
<given-names><![CDATA[W.]]></given-names>
</name>
</person-group>
<source><![CDATA[J. Less-Common Met.]]></source>
<year>1966</year>
<volume>10</volume>
<page-range>42</page-range></nlm-citation>
</ref>
<ref id="B3">
<label>[3]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Wang]]></surname>
<given-names><![CDATA[S. H.]]></given-names>
</name>
<name>
<surname><![CDATA[Money]]></surname>
<given-names><![CDATA[S. E.]]></given-names>
</name>
<name>
<surname><![CDATA[Hull]]></surname>
<given-names><![CDATA[B. A.]]></given-names>
</name>
<name>
<surname><![CDATA[Bennet]]></surname>
<given-names><![CDATA[B. R.]]></given-names>
</name>
</person-group>
<source><![CDATA[Vac. Sci. Technol.]]></source>
<year>2003</year>
<volume>21</volume>
<page-range>633</page-range></nlm-citation>
</ref>
<ref id="B4">
<label>[4]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Sigmund]]></surname>
<given-names><![CDATA[J.]]></given-names>
</name>
<name>
<surname><![CDATA[Sglam]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<name>
<surname><![CDATA[Voight]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<name>
<surname><![CDATA[Hartnagel]]></surname>
<given-names><![CDATA[L]]></given-names>
</name>
<name>
<surname><![CDATA[Bushmann]]></surname>
<given-names><![CDATA[V.]]></given-names>
</name>
<name>
<surname><![CDATA[Wieder]]></surname>
<given-names><![CDATA[T.]]></given-names>
</name>
<name>
<surname><![CDATA[Fuess]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
</person-group>
<source><![CDATA[J. Crystal Growth]]></source>
<year>2001</year>
<volume>227</volume>
<page-range>625</page-range></nlm-citation>
</ref>
<ref id="B5">
<label>[5]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Kim]]></surname>
<given-names><![CDATA[T. J.]]></given-names>
</name>
<name>
<surname><![CDATA[Krishnamoothy]]></surname>
<given-names><![CDATA[V.]]></given-names>
</name>
<name>
<surname><![CDATA[Puga-Lambers]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<name>
<surname><![CDATA[Holloway]]></surname>
<given-names><![CDATA[P. H.]]></given-names>
</name>
</person-group>
<source><![CDATA[J. Appl. Phys.]]></source>
<year>1999</year>
<volume>85</volume>
<page-range>208</page-range></nlm-citation>
</ref>
<ref id="B6">
<label>[6]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Barman]]></surname>
<given-names><![CDATA[P.]]></given-names>
</name>
<name>
<surname><![CDATA[Basu]]></surname>
<given-names><![CDATA[N.]]></given-names>
</name>
<name>
<surname><![CDATA[Basu]]></surname>
</name>
</person-group>
<source><![CDATA[Semicond. Sci. Technol.]]></source>
<year>1991</year>
<volume>6</volume>
<page-range>129</page-range></nlm-citation>
</ref>
<ref id="B7">
<label>[7]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Chesler]]></surname>
<given-names><![CDATA[L. A.]]></given-names>
</name>
<name>
<surname><![CDATA[Robinson]]></surname>
<given-names><![CDATA[G. Y.]]></given-names>
</name>
</person-group>
<source><![CDATA[Appl. Phys. Lett.]]></source>
<year>1978</year>
<volume>32</volume>
<page-range>60</page-range></nlm-citation>
</ref>
<ref id="B8">
<label>[8]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Robinson]]></surname>
<given-names><![CDATA[J. A.]]></given-names>
</name>
</person-group>
<source><![CDATA[Solid State Electron.]]></source>
<year>2004</year>
<volume>48</volume>
<page-range>1667</page-range></nlm-citation>
</ref>
<ref id="B9">
<label>[9]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Heinz]]></surname>
<given-names><![CDATA[C.]]></given-names>
</name>
</person-group>
<source><![CDATA[Int. J. Electronics]]></source>
<year>1993</year>
<volume>75</volume>
<page-range>285</page-range></nlm-citation>
</ref>
<ref id="B10">
<label>[10]</label><nlm-citation citation-type="confpro">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Concepción]]></surname>
<given-names><![CDATA[Arlene]]></given-names>
</name>
</person-group>
<source><![CDATA[Proceeding of the National Conference on the Undergraduate Research]]></source>
<year>2002</year>
<conf-name><![CDATA[ NCUR]]></conf-name>
<conf-date>2002</conf-date>
<conf-loc> </conf-loc>
<page-range>1-5</page-range><publisher-loc><![CDATA[Whitewater, Wisconsin ]]></publisher-loc>
</nlm-citation>
</ref>
<ref id="B11">
<label>[11]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Stremsdoerfer]]></surname>
<given-names><![CDATA[G.]]></given-names>
</name>
<name>
<surname><![CDATA[Nguyen]]></surname>
<given-names><![CDATA[D.]]></given-names>
</name>
<name>
<surname><![CDATA[Jafferzic-Renault]]></surname>
<given-names><![CDATA[N.]]></given-names>
</name>
<name>
<surname><![CDATA[Martin]]></surname>
<given-names><![CDATA[J. R.]]></given-names>
</name>
<name>
<surname><![CDATA[Clechert]]></surname>
<given-names><![CDATA[P.]]></given-names>
</name>
</person-group>
<source><![CDATA[J. Electrochem. Soc.]]></source>
<year>1993</year>
<volume>140</volume>
<page-range>519</page-range></nlm-citation>
</ref>
<ref id="B12">
<label>[12]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Nagahara]]></surname>
<given-names><![CDATA[L. A.]]></given-names>
</name>
</person-group>
<source><![CDATA[J. Vac. Technol.]]></source>
<year>1993</year>
<volume>A 11</volume>
<page-range>763</page-range></nlm-citation>
</ref>
<ref id="B13">
<label>[13]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Dingfen]]></surname>
<given-names><![CDATA[W.]]></given-names>
</name>
<name>
<surname><![CDATA[Dening]]></surname>
<given-names><![CDATA[W.]]></given-names>
</name>
</person-group>
<source><![CDATA[Solid State Electron.]]></source>
<year>1986</year>
<volume>29</volume>
<page-range>489</page-range></nlm-citation>
</ref>
<ref id="B14">
<label>[14]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Subkety]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<name>
<surname><![CDATA[Chin]]></surname>
<given-names><![CDATA[V. L.]]></given-names>
</name>
<name>
<surname><![CDATA[Tansley]]></surname>
<given-names><![CDATA[T. L.]]></given-names>
</name>
</person-group>
<source><![CDATA[Solid State Electron.]]></source>
<year>1996</year>
<volume>39</volume>
<page-range>329</page-range></nlm-citation>
</ref>
<ref id="B15">
<label>[15]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Kim]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
</person-group>
<source><![CDATA[Materials Letter]]></source>
<year>2004</year>
<volume>58</volume>
<page-range>1107</page-range></nlm-citation>
</ref>
</ref-list>
</back>
</article>
