<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0035-001X</journal-id>
<journal-title><![CDATA[Revista mexicana de física]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. mex. fis.]]></abbrev-journal-title>
<issn>0035-001X</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Física]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0035-001X2024000401001</article-id>
<article-id pub-id-type="doi">10.31349/revmexfis.70.041001</article-id>
<title-group>
<article-title xml:lang="es"><![CDATA[Efectos del desorden estructural sobre el cambio en el índice de refracción de un sistema &#948;-dopado simple en GaAs]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Noverola Gamas]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Martínez Solís]]></surname>
<given-names><![CDATA[F.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Oubram]]></surname>
<given-names><![CDATA[O.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Universidad Juárez Autónoma de Tabasco División Académica de Ingeniería y Arquitectura ]]></institution>
<addr-line><![CDATA[Cunduacán ]]></addr-line>
<country>México</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Universidad Autónoma del Estado de Morelos Facultad de Ciencias Químicas e Ingeniería ]]></institution>
<addr-line><![CDATA[Cuernavaca Morelos]]></addr-line>
<country>México</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>08</month>
<year>2024</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>08</month>
<year>2024</year>
</pub-date>
<volume>70</volume>
<numero>4</numero>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S0035-001X2024000401001&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S0035-001X2024000401001&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S0035-001X2024000401001&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="es"><p><![CDATA[Partiendo de la teoría de masa efectiva y el modelo de Thomas-Fermi (TF) se ha establecido el perfil de potencial para un sistema tipo delta-dopado simple en Arseniuro de Galio (GaAs) tipo n. Resolviendo la ecuación de Schrödinger asociada al sistema, se han calculado los autovalores y las autofunciones del perfil de potencial, determinando así su estructura electrónica. Con ayuda de la teoría de Matriz Densidad se ha determinado el cambio en el índice de refracción (CIR) lineal y no lineal del sistema. De tal manera que, añadiendo un término de desorden en el sistema (&#950;), es posible calcular numéricamente los cambios en la estructura electrónica y las propiedades ópticas no lineales. Se ha determinado que con valores de &#950; alrededor del 10% asociado a la densidad de impurezas (N 2D), el cambio en el índice de refracción lineal y no lineal no sufre cambios significativos. Por otro lado, cuando se incrementa el desorden en la densidad de impurezas introducidas en el material semiconductor, el comportamiento de la propiedad óptica se pierde por completo. Finalmente, notamos que al introducir desorden en la intensidad del laser, la propiedad óptica no sufre cambios. El presente estudio teórico podría predecir el efecto del desorden estructural sobre el comportamiento del CIR en los dispositivos basados en delta dopados al momento de su síntesis.]]></p></abstract>
<abstract abstract-type="short" xml:lang="en"><p><![CDATA[Starting from the effective mass theory and the Thomas-Fermi (TF) model, the potential profile for a simple delta-doped type system in n-type Gallium Arsenide (GaAs) has been established. By solving the Schrödinger equation associated with the system, the eigenvalues and eigenfunctions of the potential profile have been calculated, thus determining its electronic structure. With the help of the Density Matrix theory, the change in the linear and nonlinear refraction index (CIR) of the system has been determined. In such a way that, by adding a disorder term in the system (&#950;), it is possible to numerically calculate the changes in the electronic structure and the nonlinear optical properties. It has been determined that with values of &#950;around 10% associated with the density of impurities (N 2D), the change in the linear and nonlinear refraction index does not undergo changes significant. On the other hand, when the disorder in the density of impurities introduced into the semiconductor material increases, the behavior of the optical property is completely lost. Finally, we note that by introducing disorder in the laser intensity, the optical property does not suffer changes. The present theoretical study could predict the effect of structural disorder on the behavior of the CIR in delta-doped devices at the time of their synthesis.]]></p></abstract>
<kwd-group>
<kwd lng="es"><![CDATA[Dopaje delta]]></kwd>
<kwd lng="es"><![CDATA[óptica no lineal]]></kwd>
<kwd lng="es"><![CDATA[arseniuro de galio]]></kwd>
<kwd lng="es"><![CDATA[desorden estructural]]></kwd>
<kwd lng="es"><![CDATA[cambio en el índice de refracción]]></kwd>
<kwd lng="en"><![CDATA[Delta doping]]></kwd>
<kwd lng="en"><![CDATA[nonlinear optics]]></kwd>
<kwd lng="en"><![CDATA[gallium arsenide]]></kwd>
<kwd lng="en"><![CDATA[structural disorder]]></kwd>
<kwd lng="en"><![CDATA[change in the refractive index]]></kwd>
</kwd-group>
</article-meta>
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