Formation and characterization of ion beam assisted nanosystems in silicon
P.R. Poudelª, B. Routª, K.M. Hossainª, M.S. Dhoubhadelª, V.C. Kummariª, A. Neogib, and F.D. McDanielª,*
ª Ion Beam Modification and Analysis Laboratory, Department of Physics, University of North Texas, 1155 Union Circle#311427, Denton, Texas 76203, USA. *Phone: 940–565–3251; fax: 940–565–2227. E–mail: mcdaniel@unt.edu
b Ultrafast Spectroscopy and Nanophotonics Laboratory, Department of Physics, University of North Texas, 1155 Union Circle#311427, Denton, Texas 76203, USA.
Recibido el 28 de enero de 2010 ]]> Aceptado el 21 de mayo de 2010
Abstract
Even though silicon is optically inactive, the nanoscale particle structures (e.g. SiC) in Si or silica matrices are potential candidates for light emitting solid state device applications with higher operation temperatures. The synthesis of these nanostructures involves ion implantation and subsequent thermal annealing. The film thicknesses and sizes of the nanostructures can be controlled by ion energy, fluence, and annealing conditions. Particle accelerator based characterization was used at different stages of formation and analysis of these nanosystems in Si. Results will be presented using infrared spectroscopy (IR), X–ray diffraction spectroscopy (XRD), and photoluminescence (PL) spectroscopy.
Keywords: SiC; nanosystems; ion implantation; photoluminescence.
Resumen
Aunque el silicio es ópticamente inactivo, las estructuras de las partículas a nanoescala (por ejemplo, carburo de silicio) en Si o en la matriz de sílice son candidatos potenciales para aplicaciones de dispositivos emisores de luz de estado sólido con temperaturas de operación mayores. La síntesis de estas nanoestructuras implica la implantación de iones y de recocido térmico posterior. Los espesores de película y tamaños de las nanoestructuras pueden ser controladas por la energía de iones, flujo de energía y las condiciones de recocido. Una caracterizacion basada en un acelerador de partículas se utilizó en las diferentes etapas de la formación y el analísis de estos nanosistemas en Si. Los resultados se presentarán mediante espectroscopía de infrarrojos (IR), X–espectroscopía de difracción de rayos X (DRX), y espectroscopía de fotoluminiscencia (PL).
Descriptores: SiC; nanosistemas; la implantación de iones; fotoluminiscencia.
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Acknowledgements
The Work at UNT is supported in part by the National Science Foundation and the Robert A. Welch Foundation.
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