<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>2448-5691</journal-id>
<journal-title><![CDATA[Mundo nano. Revista interdisciplinaria en nanociencias y nanotecnología]]></journal-title>
<abbrev-journal-title><![CDATA[Mundo nano]]></abbrev-journal-title>
<issn>2448-5691</issn>
<publisher>
<publisher-name><![CDATA[Universidad Nacional Autónoma de México, Instituto de Ciencias Aplicadas y Tecnología]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S2448-56912012000100042</article-id>
<title-group>
<article-title xml:lang="es"><![CDATA[El nitruro de galio y sus aleaciones: ¡y se hizo la luz&#8230; azul!]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Tutor Sánchez]]></surname>
<given-names><![CDATA[Joaquín Darío]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Bruno Alfonso]]></surname>
<given-names><![CDATA[Alexys]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Universidad Pontificia Comillas Escuela Técnica Superior de Ingeniería ]]></institution>
<addr-line><![CDATA[Madrid ]]></addr-line>
<country>Spain</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Universidade Estadual Paulista  ]]></institution>
<addr-line><![CDATA[ São Paulo]]></addr-line>
<country>Brazil</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>06</month>
<year>2012</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>06</month>
<year>2012</year>
</pub-date>
<volume>5</volume>
<numero>1</numero>
<fpage>42</fpage>
<lpage>58</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S2448-56912012000100042&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S2448-56912012000100042&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S2448-56912012000100042&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="es"><p><![CDATA[Resumen El estudio de los dispositivos semiconductores emisores de luz azul ha sido un tema de trascendental importancia tanto desde el punto de vista científico como tecnológico. En el presente artículo se presta especial atención al desarrollo científico y tecnológico de los diodos emisores de luz y los diodos láser basados en la tecnología del nitruro de galio. Las principales propiedades del nitruro de galio y dos de sus aleaciones, el nitruro de indio-galio y el nitruro de aluminio-galio, se presentan cualitativamente. Una breve introducción a las nuevas fuentes de luz basadas en los dispositivos semiconductores emisores de luz sirve de base argumental para hacer una breve reseña histórica de la investigación, el desarrollo y la innovación llevadas a cabo por Isamu Akasaki, Hiroshi Amano y Shuji Nakamura que dieron como resultado el diseño, construcción y posterior comercialización de los diodos emisores de luz azul y láser de luz azul. Finalmente, se hace una valoración de la trascendencia social, económica y medioambiental del los dispositivos emisores de luz con base en la tecnología del nitruro de galio.]]></p></abstract>
<abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract The study of blue light emitting semiconductor devices has been a topic of transcendental importance since the point of view of science as well as technology. In the present paper special attention is paid to the scientific and technological development of light emitting diodes and laser diodes based on the gallium nitride technology. The principal properties of gallium nitride and two of its alloys, indium-gallium nitride and aluminum-gallium nitride are qualitatively presented. An introduction to the new sources of light based on the light emitting semiconductor devices allows a brief historical review of the researches, the developments and the innovations carried out by Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. Such scientific and technological works gave as results the design, fabrication and commercialization of blue light emitting diodes and blue laser diodes. Finally, an analysis of the economical, social and environmental importance of the blue emitting devices based on gallium nitride technology is done.]]></p></abstract>
<kwd-group>
<kwd lng="es"><![CDATA[Nitruro de galio y sus aleaciones]]></kwd>
<kwd lng="es"><![CDATA[LED azul]]></kwd>
<kwd lng="es"><![CDATA[LD azul]]></kwd>
<kwd lng="en"><![CDATA[Gallium nitride and its alloys]]></kwd>
<kwd lng="en"><![CDATA[blue LED]]></kwd>
<kwd lng="en"><![CDATA[blue LD]]></kwd>
</kwd-group>
</article-meta>
</front><back>
<ref-list>
<ref id="B1">
<nlm-citation citation-type="journal">
<collab>La Flecha</collab>
<article-title xml:lang=""><![CDATA[El nitruro de galio podría revolucionar la iluminación a corto plazo]]></article-title>
<source><![CDATA[Tu Diario de Ciencia y Tecnología]]></source>
<year>2009</year>
</nlm-citation>
</ref>
<ref id="B2">
<nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Hang]]></surname>
<given-names><![CDATA[D. R.]]></given-names>
</name>
<name>
<surname><![CDATA[Chen]]></surname>
<given-names><![CDATA[C. H.]]></given-names>
</name>
<name>
<surname><![CDATA[Chen]]></surname>
<given-names><![CDATA[Y. F.]]></given-names>
</name>
<name>
<surname><![CDATA[Jiang]]></surname>
<given-names><![CDATA[H. X.]]></given-names>
</name>
<name>
<surname><![CDATA[Lin]]></surname>
<given-names><![CDATA[J. Y.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[AlxGa1-xN/GaN band offsets determined by deep-level emission]]></article-title>
<source><![CDATA[Journal of Applied Physics]]></source>
<year>2001</year>
<volume>90</volume>
<numero>4</numero>
<issue>4</issue>
</nlm-citation>
</ref>
<ref id="B3">
<nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Rodríguez-Coppola]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
<name>
<surname><![CDATA[Tutor-Sánchez]]></surname>
<given-names><![CDATA[J.]]></given-names>
</name>
<name>
<surname><![CDATA[Leite]]></surname>
<given-names><![CDATA[JR.]]></given-names>
</name>
<name>
<surname><![CDATA[Scolfaro]]></surname>
<given-names><![CDATA[LMR.]]></given-names>
</name>
<name>
<surname><![CDATA[García-Moliner]]></surname>
<given-names><![CDATA[F.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[The absorption coefficient of low dimensional semiconductor systems: The photoluminescence of InGaN quantum dot]]></article-title>
<source><![CDATA[Microelectronics Journal]]></source>
<year>2004</year>
<volume>35</volume>
<numero>2</numero>
<issue>2</issue>
<page-range>103-10</page-range></nlm-citation>
</ref>
<ref id="B4">
<nlm-citation citation-type="">
<collab>Takeda Award</collab>
<source><![CDATA[Achievement Facts Sheet Techno-Entrepreneurial Achievements for Social/Economic Well-Being. The Development of Blue Light Emitting Semiconductor Devices]]></source>
<year>2002</year>
</nlm-citation>
</ref>
<ref id="B5">
<nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Amano]]></surname>
<given-names><![CDATA[Hiroshi]]></given-names>
</name>
<name>
<surname><![CDATA[Kito]]></surname>
<given-names><![CDATA[Masahiro]]></given-names>
</name>
<name>
<surname><![CDATA[Hiramatsu]]></surname>
<given-names><![CDATA[Kazumasa]]></given-names>
</name>
<name>
<surname><![CDATA[Akasaki]]></surname>
<given-names><![CDATA[Isamu]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[P-type conduction in Mg-Doped GaN treated with low-energy electron beam irradiation (LEEBI)]]></article-title>
<source><![CDATA[Japanese Journal of Applied Physics]]></source>
<year>1989</year>
<volume>28</volume>
<page-range>L2112-4</page-range></nlm-citation>
</ref>
<ref id="B6">
<nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Amano]]></surname>
<given-names><![CDATA[Hiroshi]]></given-names>
</name>
<name>
<surname><![CDATA[Asahi]]></surname>
<given-names><![CDATA[Tsunemori]]></given-names>
</name>
<name>
<surname><![CDATA[Akasaki]]></surname>
<given-names><![CDATA[Isamu]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer]]></article-title>
<source><![CDATA[Japanese Journal of Applied Physics]]></source>
<year>1990</year>
<volume>29</volume>
<page-range>L205-6</page-range></nlm-citation>
</ref>
<ref id="B7">
<nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Nakamura]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
<name>
<surname><![CDATA[Mukai]]></surname>
<given-names><![CDATA[T.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[High-quality InGaN films grown on GaN films]]></article-title>
<source><![CDATA[Japanese Journal of Applied Physics]]></source>
<year>1992</year>
<volume>31</volume>
<page-range>L1457</page-range></nlm-citation>
</ref>
<ref id="B8">
<nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Nakamura]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[InGaN-based multiquantum-well-structure laser diode]]></article-title>
<source><![CDATA[Japanese Journal of Applied Physics]]></source>
<year>1996</year>
<volume>35</volume>
<page-range>L74</page-range></nlm-citation>
</ref>
<ref id="B9">
<nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Jo]]></surname>
<given-names><![CDATA[G.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes]]></article-title>
<source><![CDATA[Nanotechnology]]></source>
<year>2010</year>
<volume>21</volume>
<page-range>175201</page-range></nlm-citation>
</ref>
</ref-list>
</back>
</article>
