Simple algebraic method to study the effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier of metal/n-GaAs

O. Oubram* L.M. Gaggero-Sager** y I. Rodríguez-Vargas***

* Facultad de Ciencias Químicas e Ingeniería, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, 62209 Cuernavaca, Morelos, México.

** Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa Cuernavaca, Morelos 62210, México.

*** Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina con Paseo la Bufa S/N, Zacatecas, Zac., 98060, México, e-mail: isaac@fisica.uaz.edu.mx

Received 10 February 2015.
Accepted 18 May 2015.

Abstract

The effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier diode of metal/n-GaAs are studied using a simple algebraic method. The method relies on the dependence of the parameters of the semiconductor (effective mass, dielectric constant and band gap) with the hydrostatic pressure. We obtain simple expressions for the Schottky Barrier Height, Background Density and Differential Capacity that account of the hydrostatic pressure readily. In particular, the Schottky Barrier Height expression agrees qualitatively with the experimental results available. The Differential Capacity expression depends directly on the effective mass, opening the possibility of determined the effective mass through capacitance measurements. Due to its simplicity the algebraic method could be useful in the design of devices that exploit hydrostatic pressure effects.

Keywords: Hydrostatic pressure; Schottky barrier height; differential capacitance; algebraic method.

PACS: 73.30+y; 73.40.Ns; 74.62.F

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Acknowledgments

O.O. acknowledges the financial support of PROMEP through grant NPTC-2013.

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