Perturbation method applied to a basic diode circuit

H. Vázquez-Leal^a *, Y. Khan^b, G. Fernández-Anaya^c, U. Filobello-Nino^a, V.M. Jiménez-Fernández^a, A. Herrera-May^d, A. Díaz-Sánchez^e, A. Marín-Hernández^f and J. Huerta-Chua^g

^a Electronic Instrumentation School, Universidad Veracruzana, Cto. Gonzalo Aguirre Beltrán S/N, Xalapa 91000, Veracruz, México, * e-mail: hvazquez@uv.mx

^b Department of Mathematics, Zhejiang University, Hangzhou 310027, China.

^c Departamento de Física y Matemáticas, Universidad Iberoamericana, Prol. Paseo de la Reforma 880, 01219 D.F., México.

^e National Institute for Astrophysics, Optics and Electronics, Luis Enrique Erro #1, Sta. María Tonantzintla 72840, Puebla, México.

^f Department of Artificial Intelligence, Universidad Veracruzana, Sebastián Camacho No. 5, Xalapa 91000, Veracruz, México.

^g Facultad de Ingeniería Civil, Universidad Veracruzana, Venustiano Carranza S/N, Col. Revolución, C.P. 93390, Poza Rica, Veracruz, México.

Received 3 December 2013;
accepted 11 December 2014

Abstract

Because of the exponential characteristic of silicon diodes, exact solutions cannot be established when operating point and transient analysis are computed. To overcome that problem, the present work proposes a perturbation method which allows obtaining approximated analytic expressions of diode-based circuits. Simulation results show that numerical solutions obtained by using the proposed method are similar to those reported in literature, with the advantage of not requiring a user-selected arbitrary expansion point. Additionally, the method does not use the Lambert function W, reducing the proposed solution complexity, which makes it suitable for engineering applications.

PACS: 07.50.Ek, 84.30.-r, 02.70.-c, 05.45.-a

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Acknowledgments

The authors wish to acknowledge to Rogelio Alejandro Callejas-Molina and Roberto Ruiz-Gomez for their technical support. Besides, this work has been supported by CONACYT Mexico research project CB-2010-01 #157024.

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