<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0035-001X</journal-id>
<journal-title><![CDATA[Revista mexicana de física]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. mex. fis.]]></abbrev-journal-title>
<issn>0035-001X</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Física]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0035-001X2002000500002</article-id>
<title-group>
<article-title xml:lang="es"><![CDATA[Simulación numérica de señales de radiometría fototérmica en mono cristales de silicio]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Campos-Cantón]]></surname>
<given-names><![CDATA[I.]]></given-names>
</name>
<xref ref-type="aff" rid="A01"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Rodríguez]]></surname>
<given-names><![CDATA[M.E.]]></given-names>
</name>
<xref ref-type="aff" rid="A02"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Ruiz]]></surname>
<given-names><![CDATA[Facundo]]></given-names>
</name>
<xref ref-type="aff" rid="A03"/>
</contrib>
</contrib-group>
<aff id="A01">
<institution><![CDATA[,Universidad Autónoma de San Luis Potosí Facultad de Ciencias ]]></institution>
<addr-line><![CDATA[San Luis Potosí ]]></addr-line>
<country>México</country>
</aff>
<aff id="A02">
<institution><![CDATA[,Universidad Nacional Autónoma de México  ]]></institution>
<addr-line><![CDATA[Juriquilla Querétaro]]></addr-line>
<country>México</country>
</aff>
<aff id="A03">
<institution><![CDATA[,Instituto Potosino de Investigación Científica y Tecnológica  ]]></institution>
<addr-line><![CDATA[San Luis Potosí ]]></addr-line>
<country>México</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>00</month>
<year>2002</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>00</month>
<year>2002</year>
</pub-date>
<volume>48</volume>
<numero>5</numero>
<fpage>397</fpage>
<lpage>404</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S0035-001X2002000500002&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S0035-001X2002000500002&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S0035-001X2002000500002&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="es"><p><![CDATA[Utilizando el modelo teórico propuesto por Mandelis et al. y mediante simulación numérica, se analiza detalladamente la generación de radiación de cuerpo negro foto-inducida (señal de radiometría fototérmica) en obleas de silicios monocristalino. Se reporta la influencia particular de dicha radiación en cada uno de los principales parámetros físicos involucrados. Los valores utilizados para estos parámetros están dentro de los rangos reportados para obleas de silicio industriales. Se presentan y discuten los resultados obtenidos.]]></p></abstract>
<abstract abstract-type="short" xml:lang="en"><p><![CDATA[By using the theoretical model proposed by Mandelis et al. and a numerical simulations. We have analysed the generation of photoinduced black body radiation (photothermal radimometry signal) on monocrystalline silicon wafers. We report the particular role of each one of the main parameters involved on the phototermal signal. The parameter values were taken of the reported values for industrial silicon wafers. We show a discuss the obtained results.]]></p></abstract>
<kwd-group>
<kwd lng="es"><![CDATA[Radiometría fototérmica]]></kwd>
<kwd lng="es"><![CDATA[conducción de calor]]></kwd>
<kwd lng="es"><![CDATA[onda de plasma]]></kwd>
<kwd lng="en"><![CDATA[Photothermal radimometry]]></kwd>
<kwd lng="en"><![CDATA[heat conduction]]></kwd>
<kwd lng="en"><![CDATA[phonons]]></kwd>
</kwd-group>
</article-meta>
</front><body><![CDATA[  	    <p align="justify"><font face="verdana" size="4">Investigaci&oacute;n</font></p>  	    <p>&nbsp;</p>  	    <p align="center"><font face="verdana" size="4"><b>Simulaci&oacute;n num&eacute;rica de se&ntilde;ales de radiometr&iacute;a fotot&eacute;rmica en mono cristales de</b> <b>silicio</b></font></p>  	    <p>&nbsp;</p>  	    <p align="center"><font face="verdana" size="2"><b>I. Campos&#45;Cant&oacute;n<sup>1</sup>, M.E. Rodr&iacute;guez<sup>2</sup>, Facundo Ruiz<sup>3</sup><a href="#nota">*</a></b><a href="#nota"></a></font></p>  	    <p>&nbsp;</p>  	    <p align="justify"><font face="verdana" size="2"><i><sup>1</sup> Facultad de Ciencias, Universidad Aut&oacute;noma de San Luis Potos&iacute; 78000 San Luis Potos&iacute;, SLP M&eacute;xico</i>.</font></p>  	    <p align="justify"><font face="verdana" size="2"><i><sup>2</sup> F&iacute;sica Aplicada y Tecnolog&iacute;a Avanzada, Universidad Nacional Aut&oacute;noma de M&eacute;xico</i> <i>76000 Juriquilla, Qro. M&eacute;xico</i>.</font></p>  	    <p align="justify"><font face="verdana" size="2"><i><sup>3</sup> Instituto Potosino de Investigaci&oacute;n Cient&iacute;fica y Tecnol&oacute;gica Av. Carranza 2425&#45;A, 78210 San Luis Potos&iacute;, S.L.P., M&eacute;xico</i>.</font></p>  	    ]]></body>
<body><![CDATA[<p>&nbsp;</p>  	    <p align="justify"><font face="verdana" size="2">Recibido el 25 de septiembre de 2001.    <br> 	Aceptado el 17 de junio de 2002.</font></p>  	    <p>&nbsp;</p>  	    <p align="justify"><font face="verdana" size="2"><b>Resumen</b></font></p>  	    <p align="justify"><font face="verdana" size="2">Utilizando el modelo te&oacute;rico propuesto por Mandelis <i>et al.</i> y mediante simulaci&oacute;n num&eacute;rica, se analiza detalladamente la generaci&oacute;n de radiaci&oacute;n de cuerpo negro foto&#45;inducida (se&ntilde;al de radiometr&iacute;a fotot&eacute;rmica) en obleas de silicios monocristalino. Se reporta la influencia particular de dicha radiaci&oacute;n en cada uno de los principales par&aacute;metros f&iacute;sicos involucrados. Los valores utilizados para estos par&aacute;metros est&aacute;n dentro de los rangos reportados para obleas de silicio industriales. Se presentan y discuten los resultados obtenidos.</font></p>  	    <p align="justify"><font face="verdana" size="2"><b>Descriptores:</b> Radiometr&iacute;a fotot&eacute;rmica; conducci&oacute;n de calor; onda de plasma.</font></p>  	    <p>&nbsp;</p>  	    <p align="justify"><font face="verdana" size="2"><b>Abstract</b></font></p>  	    <p align="justify"><font face="verdana" size="2">By using the theoretical model proposed by Mandelis <i>et al.</i> and a numerical simulations. We have analysed the generation of photoinduced black body radiation (photothermal radimometry signal) on monocrystalline silicon wafers. We report the particular role of each one of the main parameters involved on the phototermal signal. The parameter values were taken of the reported values for industrial silicon wafers. We show a discuss the obtained results.</font></p>  	    ]]></body>
<body><![CDATA[<p align="justify"><font face="verdana" size="2"><b>Keywords:</b> Photothermal radimometry; heat conduction; phonons.</font></p>  	    <p>&nbsp;</p>  	    <p align="justify"><font face="verdana" size="2">PACS: 44.10.+i;44.40.+a</font></p>  	    <p>&nbsp;</p>  	    <p align="justify"><font face="verdana" size="2"><a href="/pdf/rmf/v48n5/v48n5a2.pdf" target="_blank">DESCARGAR ART&Iacute;CULO EN FORMATO PDF</a></font></p>  	    <p>&nbsp;</p>  	    <p align="justify"><font face="verdana" size="2"><b>Referencias</b></font></p>  	    <!-- ref --><p align="justify"><font face="verdana" size="2">1. M. E. Rodr&iacute;guez, <i>et al., J. of the Electrochemical Society</i> <b>147 s&#45;7</b> (2000) 6.    &nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;[&#160;<a href="javascript:void(0);" onclick="javascript: window.open('/scielo.php?script=sci_nlinks&ref=8289592&pid=S0035-001X200200050000200001&lng=','','width=640,height=500,resizable=yes,scrollbars=1,menubar=yes,');">Links</a>&#160;]<!-- end-ref --></font></p>  	    <!-- ref --><p align="justify"><font face="verdana" size="2">2. D. K. Schroder, <i>IEEE Trans. on Electron device</i> <b>44</b> (1997) 160.    &nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;[&#160;<a href="javascript:void(0);" onclick="javascript: window.open('/scielo.php?script=sci_nlinks&ref=8289594&pid=S0035-001X200200050000200002&lng=','','width=640,height=500,resizable=yes,scrollbars=1,menubar=yes,');">Links</a>&#160;]<!-- end-ref --></font></p>  	    <!-- ref --><p align="justify"><font face="verdana" size="2">3. T. Ikari, A. Salnick and A. Mandelis, <i>J. Appl. Phys</i> <b>85</b> (1999) 7392.    &nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;[&#160;<a href="javascript:void(0);" onclick="javascript: window.open('/scielo.php?script=sci_nlinks&ref=8289596&pid=S0035-001X200200050000200003&lng=','','width=640,height=500,resizable=yes,scrollbars=1,menubar=yes,');">Links</a>&#160;]<!-- end-ref --></font></p>  	    <!-- ref --><p align="justify"><font face="verdana" size="2">4. A. Mandelis, <i>Solid State Electron</i> <b>42</b> (1998) 1.    &nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;[&#160;<a href="javascript:void(0);" onclick="javascript: window.open('/scielo.php?script=sci_nlinks&ref=8289598&pid=S0035-001X200200050000200004&lng=','','width=640,height=500,resizable=yes,scrollbars=1,menubar=yes,');">Links</a>&#160;]<!-- end-ref --></font></p>  	    <!-- ref --><p align="justify"><font face="verdana" size="2">5. M. E. Rodr&iacute;guez, J. A. Garc&iacute;a, A. Mandelis, Y. Riopel and C. Jean, <i>Appl. Phys. Lett.</i> <b>74</b> (1999) 2429.    &nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;[&#160;<a href="javascript:void(0);" onclick="javascript: window.open('/scielo.php?script=sci_nlinks&ref=8289600&pid=S0035-001X200200050000200005&lng=','','width=640,height=500,resizable=yes,scrollbars=1,menubar=yes,');">Links</a>&#160;]<!-- end-ref --></font></p>  	    <!-- ref --><p align="justify"><font face="verdana" size="2">6. <i>Transforms and Applications</i> Handbook, Editor&#45;in&#45;Chief A. D. Poularikas, The Electrical Engineering Handbook Series, Editor R. C. Dorf (CRC Press, N.Y. 1996)</font>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;[&#160;<a href="javascript:void(0);" onclick="javascript: window.open('/scielo.php?script=sci_nlinks&ref=8289602&pid=S0035-001X200200050000200006&lng=','','width=640,height=500,resizable=yes,scrollbars=1,menubar=yes,');">Links</a>&#160;]<!-- end-ref --><p>&nbsp;</p>  	    <p align="justify"><font face="verdana" size="2"><a name="nota"></a><b>Nota</b></font></p>  	    ]]></body>
<body><![CDATA[<p align="justify"><font face="verdana" size="2">* En permiso sab&aacute;tico de la Universidad Aut&oacute;noma de San Luis Potos&iacute;.</font></p>      ]]></body><back>
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</article>
