<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>2594-1925</journal-id>
<journal-title><![CDATA[Revista de ciencias tecnológicas]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. cienc. tecnol.]]></abbrev-journal-title>
<issn>2594-1925</issn>
<publisher>
<publisher-name><![CDATA[Universidad Autónoma de Baja California]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S2594-19252024000400104</article-id>
<article-id pub-id-type="doi">10.37636/recit.v7n4e375</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Optical and Methanol Sensing Properties of Al-doped ZnO Thin Film]]></article-title>
<article-title xml:lang="es"><![CDATA[Propiedades de detección óptica y de metanol de una película delgada de ZnO dopada con Al]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Pandey]]></surname>
<given-names><![CDATA[Sumitra]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Marasini]]></surname>
<given-names><![CDATA[Samundra]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Ram-Ghimire]]></surname>
<given-names><![CDATA[Rishi]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Tribhuvan University Goldengate International College ]]></institution>
<addr-line><![CDATA[ Kathmandu]]></addr-line>
<country>Nepal</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Tribhuvan University Department of Physics ]]></institution>
<addr-line><![CDATA[Patandhoka Lalitpur]]></addr-line>
<country>Nepal</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>12</month>
<year>2024</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>12</month>
<year>2024</year>
</pub-date>
<volume>7</volume>
<numero>4</numero>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S2594-19252024000400104&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S2594-19252024000400104&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S2594-19252024000400104&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract. The study investigates the optical and electrical properties of undoped and aluminum (Al)-doped zinc oxide (ZnO) films, focusing on their performance as gas sensors and their potential applications. Optical analysis, conducted using UV-visible spectrophotometry, reveals that 1% Al-doped ZnO films exhibit the highest transmittance of 91%, indicating superior optical clarity and suitability for applications like solar cell electrodes. In contrast, 3% Al-doped ZnO films show significantly lower transmittance due to increased light scattering and photon absorption. The bandgap of ZnO films decreases with higher Al doping concentrations, from 3.3 eV for undoped ZnO to 3.15 eV for 3% Al-doped ZnO, suggesting enhanced electrical conductivity due to reduced bandgap. The extinction coefficient data demonstrate that 2% Al-doped ZnO has the highest extinction coefficient, reflecting improved light absorption and scattering properties. Electrical characterization through I-V curves indicates that 1% Al-doped ZnO films have higher current (121 µA) compared to undoped (431 µA) and higher doping concentrations, attributed to enhanced carrier concentration and mobility. Sensitivity tests show that 2.5% Al-doped ZnO films exhibit the highest sensitivity to methanol vapor, with a significant reduction in resistance compared to 0.5% Al-doped ZnO films. Resistance measurements with varying methanol volumes reveal a rapid decrease upon gas introduction, stabilizing and then increasing as the gas is removed. Sensitivity analysis indicates that 100 µL methanol provides the highest sensitivity (97%) at 60°C, while 2% Al-doped ZnO films show consistent sensitivity at 60 °C and 100 °C, but not at 80 °C.]]></p></abstract>
<abstract abstract-type="short" xml:lang="es"><p><![CDATA[Resumen. El estudio investiga las propiedades ópticas y eléctricas de películas de óxido de zinc (ZnO) dopadas con aluminio (Al) y sin dopar, centrándose en su rendimiento como sensores de gas y sus posibles aplicaciones. El análisis óptico, realizado mediante espectrofotometría UV-visible, revela que las películas de ZnO dopadas con Al al 1 % exhiben la transmitancia más alta del 91 %, lo que indica una claridad óptica superior y su idoneidad para aplicaciones como electrodos de células solares. Por el contrario, las películas de ZnO dopadas con Al al 3 % muestran una transmitancia significativamente menor debido al aumento de la dispersión de la luz y la absorción de fotones. La brecha de banda de las películas de ZnO disminuye con mayores concentraciones de dopaje de Al, de 3,3 eV para ZnO sin dopar a 3,15 eV para ZnO dopado con Al al 3 %, lo que sugiere una conductividad eléctrica mejorada debido a la brecha de banda reducida. Los datos del coeficiente de extinción demuestran que el ZnO dopado con Al al 2 % tiene el coeficiente de extinción más alto, lo que refleja propiedades mejoradas de absorción y dispersión de la luz. La caracterización eléctrica a través de curvas I-V indica que las películas de ZnO dopadas con Al al 1 % tienen una corriente más alta (121 µA) en comparación con las no dopadas (431 µA) y mayores concentraciones de dopaje, atribuidas a una mayor concentración y movilidad de portadores. Las pruebas de sensibilidad muestran que las películas de ZnO dopadas con Al al 2,5 % exhiben la mayor sensibilidad al vapor de metanol, con una reducción significativa en la resistencia en comparación con las películas de ZnO dopadas con Al al 0,5 %. Las mediciones de resistencia con volúmenes de metanol variables revelan una rápida disminución al introducir el gas, estabilizándose y luego aumentando a medida que se elimina el gas. El análisis de sensibilidad indica que 100 µL de metanol proporciona la mayor sensibilidad (97 %) a 60 °C, mientras que las películas de ZnO dopadas con Al al 2 % muestran una sensibilidad constante a 60 °C y 100 °C, pero no a 80 °C.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[ZnO films]]></kwd>
<kwd lng="en"><![CDATA[Aluminum doping]]></kwd>
<kwd lng="en"><![CDATA[Optical transmittance]]></kwd>
<kwd lng="en"><![CDATA[Bandgap reduction]]></kwd>
<kwd lng="en"><![CDATA[Electrical conductivity]]></kwd>
<kwd lng="en"><![CDATA[Gas sensor sensitivity]]></kwd>
<kwd lng="es"><![CDATA[Películas de ZnO]]></kwd>
<kwd lng="es"><![CDATA[Dopaje de aluminio]]></kwd>
<kwd lng="es"><![CDATA[Transmitancia óptica]]></kwd>
<kwd lng="es"><![CDATA[Reducción de la banda prohibida]]></kwd>
<kwd lng="es"><![CDATA[Conductividad eléctrica]]></kwd>
<kwd lng="es"><![CDATA[Sensibilidad del sensor de gas]]></kwd>
</kwd-group>
</article-meta>
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