<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>2007-7858</journal-id>
<journal-title><![CDATA[CienciaUAT]]></journal-title>
<abbrev-journal-title><![CDATA[CienciaUAT]]></abbrev-journal-title>
<issn>2007-7858</issn>
<publisher>
<publisher-name><![CDATA[Universidad Autónoma de Tamaulipas]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S2007-78582023000100006</article-id>
<article-id pub-id-type="doi">10.29059/cienciauat.v17i2.1737</article-id>
<title-group>
<article-title xml:lang="es"><![CDATA[Fabricación y caracterización de pozos cuánticos para el estudio de la interacción luz-materia]]></article-title>
<article-title xml:lang="en"><![CDATA[Fabrication and characterization of quantum wells for the study of light-matter interaction]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Tapia-Rodríguez]]></surname>
<given-names><![CDATA[Lucy Estefanía]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Guevara-Macías]]></surname>
<given-names><![CDATA[Liliana Estela]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Lastras-Martínez]]></surname>
<given-names><![CDATA[Alfonso]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Lastras-Martínez]]></surname>
<given-names><![CDATA[Luis Felipe]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Universidad Autónoma de San Luis Potosí Instituto de Investigación en Comunicación Óptica ]]></institution>
<addr-line><![CDATA[San Luis Potosí San Luis Potosí]]></addr-line>
<country>Mexico</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>06</month>
<year>2023</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>06</month>
<year>2023</year>
</pub-date>
<volume>17</volume>
<numero>2</numero>
<fpage>6</fpage>
<lpage>23</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S2007-78582023000100006&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S2007-78582023000100006&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S2007-78582023000100006&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="es"><p><![CDATA[RESUMEN Los pozos cuánticos representan la base de una gran variedad de dispositivos electrónicos, entre ellos los ledes, láseres, fotodetectores y moduladores. Las propiedades optoelectrónicas de estos sistemas dependen de su composición química y del espesor de las capas crecidas. Por dicha razón, es necesario tener un control preciso durante su crecimiento. El presente trabajo tuvo como objetivo inducir el crecimiento epitaxial de pozos cuánticos intrínsecos (sin ningún dopaje) asimétricos acoplados y desacoplados de AlGaAs/ GaAs/AlGaAs, así como, establecer su caracterización mediante técnicas de espectroscopía óptica, como lo son la reflectancia diferencial, también conocida como espectroscopía de reflectancia anisotrópica (RAS) y la fotoluminiscencia (PL). Se realizó un estudio experimental de las interacciones entre niveles de energía en los pozos cuánticos asimétricos acoplados. Este tipo de estructuras son especialmente interesantes por permitir la formación y observación, no solo de excitones directos, dentro del mismo pozo, sino también, de excitones y triones indirectos, que se forman entre electrones de un pozo y huecos de otro pozo vecino (Transiciones intra-QW). Se hicieron crecer tres pozos intrínsecos, basados en arseniuro de galio (GaAs): un pozo individual (desacoplado) y un par de pozos asimétricos acoplados, a través de epitaxia por haces moleculares (MBE). Se observó el efecto del rompimiento de simetría (de D2d a C2v) en las propiedades espintrónicas de la estructura, a través de PL y RAS, a una temperatura de ~ 30 K. Se lograron establecer las técnicas y métodos necesarios para el crecimiento de pozos cuánticos intrínsecos, que constituyen la base para la creación de dispositivos y estructuras más complejas. El uso de técnicas espectroscópicas permitió demostrar la presencia de anisotropías ópticas, que repercuten en el comportamiento del espín de los excitones en pozos cuánticos.]]></p></abstract>
<abstract abstract-type="short" xml:lang="en"><p><![CDATA[ABSTRACT Quantum Wells are the basis for a great variety of electronic devices such as leds, lasers, photodetectors and modulators. Their optoelectronic properties depend on their chemical composition and the thickness of each layer. Therefore, a precise control during their growth is needed. This work has the objective of presenting the epitaxial growth of coupled and uncoupled asymmetric AlGaAs/GaAs/AlGaAs quantum wells and their characterization using optical techniques such as reflectance anisotropy spectroscopy (RAS) and photoluminescence (PL). An experimental study of the different interactions between the confined levels of energy in coupled quantum wells was carried on. This kind of structures is of special interest because they allow the formation and observation not only of direct excitons and trions inside a single quantum well, but of indirect excitons and trions, which are only formed by electrons of one quantum well and holes of the neighbor quantum well (IntraQW transitions). Three intrinsic quantum wells based on gallium arsenide (GaAs) were grown by molecular beam epitaxy (MBE), one single QW and a pair of coupled asymmetric QWs. The effect of breaking symmetry (from de D2d a C2v) on the spintronic properties of the structure was observed by RAS and PL measurements at ~ 30 K. The main techniques and methods for the growth of intrinsic quantum wells were established, which are the basis for the creation of devices with more complex structures. The use of spectroscopic techniques for the study of quantum wells allowed the demonstration of the presence of optical anisotropies that influence the behavior of exciton&#8217;s spins at quantum wells.]]></p></abstract>
<kwd-group>
<kwd lng="es"><![CDATA[pozo cuántico]]></kwd>
<kwd lng="es"><![CDATA[espectroscopía]]></kwd>
<kwd lng="es"><![CDATA[excitones]]></kwd>
<kwd lng="en"><![CDATA[quantum well]]></kwd>
<kwd lng="en"><![CDATA[spectroscopy]]></kwd>
<kwd lng="en"><![CDATA[excitons]]></kwd>
</kwd-group>
</article-meta>
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