Characterization of Silicon Rich Oxides with Tunable Optical Band Gap on Sapphire Substrates by Photoluminescence, UV/Vis and Raman Spectroscopy
Ragnar Kiebach,1* Jose Alberto Luna–López,1 Guilherme Osvaldo Dias,2 Mariano Aceves–Mijares,1 Jacobus Willibrordus Swart2
1 Instituto Nacional de Astrofísica, Óptica y Electrónica, Apdo. Postal 51, Puebla, Pue. 72000, México, Tel: +52 (222) 266–31–00, Fax:+52 (222) 247–05–17. *Responsible author: rkie@inaoep.mx
2 Center for Semiconductor Components, State University of Campinas, mail box 6061, Campinas – Sao Paulo – Brazil.
Recibido el 3 de abril de 2008 ]]> Aceptado el 6 de Agosto de 2008
Abstract
A detailed analysis of the optical properties of silicon rich oxides (SRO) thin films and the factors that influence them is presented. SRO films with different Si content were synthesized via LPCVD (low pressure chemical vapor deposition) on sapphire substrates. Photoluminescence (PL), UV/Vis and Raman spectroscopy were used to characterize the samples. An intense emission in blue region was found. An interesting fact is that the optical band gap correlates linearly with the reactants ratio, which allows the tuning of the band gap. The influence of parameters such as substrate, Si content, annealing temperature and annealing time on the optical properties are discussed and the possible mechanisms of the photoluminescence are compared with our experimental data.
Key words. Silicon rich oxides, optical properties, photoluminiscence.
Keywords: Silicon nano crystals, nanostructured materials, luminescence, Raman spectroscopy, silicon rich oxides.
Resumen
Se presenta un análisis detallado de las propiedades ópticas de películas delgadas de oxido de silicio rico en silicio (SRO) y los factores que tienen influencia en las propiedades físicas. Películas de SRO con diferente contenido de silicio fueron depositadas por LPCVD (Deposito químico en fase vapor a baja presión–low pressure chemical vapor deposition) sobre substratos de zafiro. Fotoluminiscencia (FL) espectroscopia UV/Vis y Raman se usaron para caracterizar las muestras. Se encontró una intensa emisión en la región azul. La característica más interesante es la banda prohibida óptica, que se correlaciona linealmente con la razón de los reactivos, lo cual permite el ajuste de la banda prohibida. Las influencias de los parámetros como el substrato, contenido de silicio, temperatura y tiempo de recocido en las propiedades ópticas se discuten y los posibles mecanismos de fotoluminiscencia son comparados con los datos experimentales.
Palabras clave. Óxidos de silicio, propiedades ópticas, fotoluminiscencia
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Acknowledgment
We are grateful for Prof. Marcos A. Pimenta and for MSc. Adriano Júnio Silva, from Federal University of Minas Gerais (UFMG) – Brazil, for the availability and help in Raman measurements. Also the Deutsche Forschungs Gemeinschaft and CONACyT are acknowledged for financial support. We also appreciate the sample preparation by the technicians of the INAOE microelectronics laboratory, especially Quim. Pablo Alarcón.
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