A. Ramírez*, R. Gómez, A. Zehe

Benemérita Universidad Autónoma de Puebla Laboratorio de Nanotrónica Ciudad Universitaria s/n col. San Manuel Puebla 72550, México. *arami@ece.buap.mx.

ABSTRACT

Semiconductor Laser or Light Emitting Diodes, (LEDs) as active elements of optical switches or spatial routing devices are widely used in integrated optical circuitry. Electro-optic, magneto-optic, mechanical or other methods are applied for that purpose. The present paper deals with a novel effect, which appears in the light field of a. c. driven luminescence emitters in Fabry-Perot structure under electrical excitation depending on time (a.c.), characterized because the light band emitted on the side face of the device moves up and down due to the finite diffusion velocity of the injected excess minority carriers. The combination of such emitter with a portioned detector element, allows spatial routing between these two detector segments. Particular emphasis is laid on a theoretical treatment of light propagation inside the emitter bulk which finally allows the construction of the light field intensity on the side face of the Fabry-Perot body, necessary to prove the proposed effect.

Keywords: optical switching; routing; luminescence diode; light field; pulsed injection.

RESUMEN

Láseres semiconductores o diodos fotoluminiscentes (LEDs) como elementos activos en switches ópticos o dispositivos de ruteo espacial son ampliamente usados en circuitos ópticos integrados. Para tal fin se aplica métodos basados en electro-óptica, magneto-óptica, mecánica, y algunos otros . En este trabajo se presenta un efecto novedoso, que aparece en el campo de radiación de diodos fotoluminiscentes en estructura Fabry-Perot bajo excitación eléctrica dependiendo en tiempo (a. c.), caracterizado por que la cinta de la luz emitida sobre la cara lateral del dispositivo se mueve hacia arriba y abajo debido a la velocidad de difusión finita de los portadores minoritarios inyectados. La combinación de tal emisor con un elemento detector partido permite el ruteo de la señal de luz entre estos dos segmentos del detector. Se pone particular énfasis en el tratamiento teórico de la propagación de luz dentro del volumen del emisor, que finalmente nos permite la construcción de la intensidad del campo de luz en las caras laterales del cuerpo Fabry-Perot, necesario para la comprobación del efecto propuesto.

DESCARGAR ARTÍCULO EN FORMATO PDF

References

[1] G. Shambat,"Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode", Nat. Communic. doi: 10.1038/ncomms 1543. (2011)        [ Links ]

[2] A.R. Lingley, "A single-pixel wireless contact lens display", J. Microsmech. Microeng. 21, 125014 (2011).         [ Links ]

[3] V.B. Markov, A.I. Khizhnyak,"Narrow bandpass widely tunable Fabry-Perot filter", Proc. SPIE 5659, 126 (2005).         [ Links ]

[4] Y. Uenishi, "Optical MEMS and their applications", IEEE/LEDs 1996 Summer Topological Meeting, Keystone, Co., pp 33-34 (1996).         [ Links ]

[5] I. Bates, J. Regis, "Optical Switching and Networking Handbook", ed. S.C. Chapman, McGraw-Hill, N.Y. 2001.         [ Links ]

[6] M. Guizan, A. Battou, "Optical Switching/Networking and Computing for Multimedia Systems", Marcel Dekker, Inc., N.Y., Basel 2002.         [ Links ]

[7] M.C. DeLeenheer, J. Develdor, B. Buysse, P. Dhoedt, P. Demeester, "Performance analysis and dimensioning of multi-granular optical networks.", Optical Switching and Networking, 6, 2 pp 88-98 (2009).         [ Links ]

[8] G. Ferrer, S.A. Malvassori, O.K. Tonguz, "On physical layer-oriented routing with power control in ad hoc wireless networks", IET Commun. 2 (2), pp. 306-319 (2008).         [ Links ]

[9] M. Rijnders,"Optical Signal Processing", ISBN 903651140-2, The Netherlands 1998.         [ Links ]

[10] Zhu, Le. Z., Fu, M., Chen, J. "Design of a practical optical cross connect with limited-range wavelength conversion" Chinese Optics Lett. 8(12), pp. 1120-1123 (2010).         [ Links ]

[11] F.K. Reinhart, I. Hayashi, and M.B. Panish, "GaAsAlxGa1-xAs Double Heterostructure Injection lasers", J. Appl. Phys. 42 44-66 (1971).         [ Links ]

[12] W.W. Anderson, "Wavelength dependence of gain saturation in GaAs lasers", IEEEJ.Quant. Electron. QE1 288 (1965).         [ Links ]

[13] M.M. Antonoff, "Directional Radiation from Incoherent Electroluminescent Diodes", J. Appl. Phys. 35 3623 (1964).         [ Links ]

[14] M.C. Adams, M. Cross, "Heterostructure injection lasers", Electron. Lett. 7 569 (1971).         [ Links ]

[15] J.K. Butler, "Theory of Transverse Cavity Mode Selection in Homojunction and Heterojunction Semiconductor Diode Lasers", J. Appl. Phys. 42 44-47 (1971).         [ Links ]

[16] K. Unger, "Coherent emission of laser structures", Ann. Physik 7. Folge 19 64 (1967).         [ Links ]

[17] D.F. Nelson, and McKenna, "Electromagnetic modes of anisotropic dielectric waveguides at p-n junctions", J. Appl. Phys. 38 4057 (1967).         [ Links ]

[18] M. Born, and E. Wolf, "Principles of Optics", Cambridge Univ. Press, 1997.         [ Links ]

[19] F. Rodríguez, A. Ramírez, A. Zehe, "El problema microfotónico de un emisor zero-dimensional dentro de un medio con absorción inhomogénea", Int. Electron. J. Nanociencia et Moletrónica, Vol.2. N° 1, pp 163-178, (2004).         [ Links ]

[20] A. Zehe, K. Jacobs, "Annealing dependent far field of GaAs-(Ga,Al)As LED's", Czech. J. Phys. B 23, pp 427-436 (1973).         [ Links ]