<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>1665-3521</journal-id>
<journal-title><![CDATA[Superficies y vacío]]></journal-title>
<abbrev-journal-title><![CDATA[Superf. vacío]]></abbrev-journal-title>
<issn>1665-3521</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S1665-35212016000200032</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Structural, optical and morphological properties of InxGa1-xAs layers obtained by RF magnetron sputtering]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Pulzara-Mora]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Montes-Monsalve]]></surname>
<given-names><![CDATA[J.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Bernal-Correa]]></surname>
<given-names><![CDATA[R.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Morales-Acevedo]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Gallardo-Hernández]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[López-López]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Universidad Nacional de Colombia Grupo Magnetismo y Materiales Avanzados Laboratorio de Nanoestructuras Semiconductoras]]></institution>
<addr-line><![CDATA[Manizales ]]></addr-line>
<country>Colombia</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Universidad del Sinú Facultad de Ingeniería Departamento de Ciencias Básicas]]></institution>
<addr-line><![CDATA[Montería ]]></addr-line>
<country>Colombia</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,Instituto Politécnico Nacional Centro de Investigación y de Estudios Avanzados Departamento de Ingeniería Eléctrica]]></institution>
<addr-line><![CDATA[D. F ]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af4">
<institution><![CDATA[,Instituto Politécnico Nacional Centro de Investigación y de Estudios Avanzados Departamento de Física]]></institution>
<addr-line><![CDATA[D. F ]]></addr-line>
<country>Mexico</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>06</month>
<year>2016</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>06</month>
<year>2016</year>
</pub-date>
<volume>29</volume>
<numero>2</numero>
<fpage>32</fpage>
<lpage>37</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S1665-35212016000200032&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S1665-35212016000200032&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S1665-35212016000200032&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract: Indium gallium arsenide layers (InxGa1-xAs) were prepared on Silicon (100) and glass substrates in an argon atmosphere by R.F. magnetron sputtering. The growth temperature was 580 °C and high purity targets of gallium arsenide and indium were used. The effects due to the RF power for the In sputtering and the substrate type on the deposited films were studied by X-ray diffraction and Raman microscopy. These studies revealed the formation of InxGa1-xAs with the zinc-blende phase. The results also show that at low In sputtering RF power, there is a preferential growth along of (111) direction. Morphology and thickness of the layers were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), revealing a variation of particle size and roughness. Energy dispersive spectroscopy (EDS) allowed us to determine the atomic percentages of In, Ga, and As. These results are in agreement with Raman measurements, where GaAs-like and InAs-like LO and TO vibrational modes were observed with a shift attributed to the indium concentrations in the InxGa1-xAs layers. By secondary ion mass spectroscopy (SIMS), the interface quality was studied.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[RF magnetron sputtering]]></kwd>
<kwd lng="en"><![CDATA[Semiconducting ternary alloys]]></kwd>
<kwd lng="en"><![CDATA[InGaAs]]></kwd>
<kwd lng="en"><![CDATA[SIMS]]></kwd>
</kwd-group>
</article-meta>
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