<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>1665-3521</journal-id>
<journal-title><![CDATA[Superficies y vacío]]></journal-title>
<abbrev-journal-title><![CDATA[Superf. vacío]]></abbrev-journal-title>
<issn>1665-3521</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S1665-35212015000100001</article-id>
<title-group>
<article-title xml:lang="es"><![CDATA[Estudio del tiempo característico de llenado de trampas en GaAs y en puntos cuánticos de InAs por medio del análisis de espectros de fotorreflectancia]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Figueroa-Reina]]></surname>
<given-names><![CDATA[T.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Sánchez-Trujillo]]></surname>
<given-names><![CDATA[D. J.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Prías-Barragán]]></surname>
<given-names><![CDATA[J. J.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
<xref ref-type="aff" rid="Aaf"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Ariza-Calderón]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Pulzara]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[López-López]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Universidad del Quindío Laboratorio de Optoelectrónica ]]></institution>
<addr-line><![CDATA[Armenia ]]></addr-line>
<country>CO</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Universidad del Quindío  ]]></institution>
<addr-line><![CDATA[Armenia ]]></addr-line>
<country>CO</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,Universidad Nacional Laboratorio de Magnetismo y Materiales Avanzados ]]></institution>
<addr-line><![CDATA[Manizales ]]></addr-line>
<country>CO</country>
</aff>
<aff id="Af4">
<institution><![CDATA[,IPN Centro de Investigación y Estudios Avanzados Departamento de Física]]></institution>
<addr-line><![CDATA[México D.F.]]></addr-line>
<country>MX</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>00</month>
<year>2015</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>00</month>
<year>2015</year>
</pub-date>
<volume>28</volume>
<numero>1</numero>
<fpage>1</fpage>
<lpage>4</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S1665-35212015000100001&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S1665-35212015000100001&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S1665-35212015000100001&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="es"><p><![CDATA[En este trabajo se presentan los resultados del estudio del tiempo de llenado de trampas (&#964;)en un monocristal de GaAs y en puntos cuánticos autoensamblados (PCAs) de InAs, empleando el análisis de espectros de Fotorreflectancia (FR) a temperatura ambiente. Los PCAs fueron crecidos sobre un sustrato de GaAs por medio de la técnica de epitaxia de haces moleculares, mientras que la muestra de GaAs es un monocristal comercial. Los espectros de FR fueron tomados variando la frecuencia del haz modulador para valores comprendidos desde 80Hz hasta 3000Hz. Del respectivo análisis de los espectros de FR, se obtuvo la dependencia de la intensidad de la señal de Fotorreflectancia con la frecuencia de modulación. A partir del ajuste de los datos experimentales de la variación de la intensidad de la señal de FR con la frecuencia de modulación, se logró determinar que la presencia de los PCAs incrementan el valor de&#964;.]]></p></abstract>
<abstract abstract-type="short" xml:lang="en"><p><![CDATA[In this paper it is presented the study of trap-filling time (&#964;)in a GaAs single crystal and InAs Self-assembled quantum dots (SAQDs), using the analysis of the photoreflectance (PR) spectra measured at room temperature. The SAQDs were grown on a GaAs substrate by molecular beam epitaxy (MBE), and GaAs sample is a commercial single crystal. The PR spectra were measured varying the chopper frequency from 80 Hz to 3000 Hz. From the analysis of these PR spectra, it was obtained the dependence of the PR signal intensity with the modulation frequency. By fitting these experimental data, it was determined that the presence of the SAQDs increases the value of&#964;.]]></p></abstract>
<kwd-group>
<kwd lng="es"><![CDATA[Fotorreflectancia]]></kwd>
<kwd lng="es"><![CDATA[Puntos cuánticos]]></kwd>
<kwd lng="es"><![CDATA[InAs]]></kwd>
<kwd lng="es"><![CDATA[GaAs]]></kwd>
<kwd lng="es"><![CDATA[Tiempo de llenado de trampas]]></kwd>
<kwd lng="en"><![CDATA[Photoreflectance]]></kwd>
<kwd lng="en"><![CDATA[Quantum dots]]></kwd>
<kwd lng="en"><![CDATA[InAs]]></kwd>
<kwd lng="en"><![CDATA[GaAs]]></kwd>
<kwd lng="en"><![CDATA[Trap-filling time]]></kwd>
</kwd-group>
</article-meta>
</front><back>
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