estimated from high-current pulse data are the lowest known up to now for SnO2 varistors.estimated from high-current pulse data are the lowest known up to now for SnO2 varistors.]]>
Glot A. B. *, ª, Lu Z. Y. b, Zhou Z. Y. b and Ivon A. I. c
ª Universidad Tecnológica de la Mixteca Huajuapan de León, Oaxaca, 69000, México. * On leave from Dniepropetrovsk National University Dniepropetrovsk, 49010, Ukraine (alexglot@mixteco.utm.mx, alexglot@mail.ru)
b South China University of Technology Guangzhou, 510640, China
c Dniepropetrovsk National University Dniepropetrovsk, 49010, Ukraine
Recibido: 20 de abril de 2011 ]]> Aceptado: 11 de junio de 2011
Abstract
Electrical properties of new dense SnO2-CoO-Nb2O5-Cr2O3-Y2O3 varistor ceramics are studied. Current-voltage characteristics in the wide range from 10-11 to about 3.3·103 A·cm-2 contain three regions. At low currents linear (Ohmic) region is found. Highly nonlinear region with the nonlinearity coefficient of about 50 at 1 mA·cm-2 is observed between 10-6 and 1 A·cm-2. At higher currents the upturn region is revealed. In this region the slope of current-voltage characteristic in the double logarithmic scale is decreased. The increase in dc current on time at fixed voltage and the hysteresis in the ac current-voltage characteristic are observed. These features can be related to Joule heating or electronic processes. However, after the high-current pulses only minor changes at low current are found. This indicates that studied ceramics withstand high-current overloads. This fact can be attributed to the formation of quite identical electrically-active grain boundaries throughout a sample. The grain resistivities estimated from high-current pulse data are the lowest known up to now for SnO2 varistors.
Keywords: Grain boundary; Non-Ohmic conduction; Potential barrier; Pulse stability; Tin dioxide; Varistor.
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References
[1]. M. Matsuoka, Jap. J. Appl. Phys. 10, 736 (1971). [ Links ]
[2]. T. K. Gupta, J. Am. Ceram. Soc. 73, 1817 (1990). [ Links ]
[3]. D. R. Clarke, J.Am.Ceram.Soc. 82, 485 (1999). [ Links ]
[4]. B. K. Avdeenko, A. B. Glot, A. I. Ivon, I. M. Chernenko and A. I. Schelokov, Inorg. Mater. 16, 1059 (1980). [ Links ]
[5]. A. B. Glot and A. P. Zlobin, Inorganic Materials 25, 274 (1989). [ Links ]
[6]. A. B. Glot, Yu. N. Proshkin, A. M. Nadzhafzade, in: Ceramics Today -Tomorrow's Ceramics. Materials science monographs, vol. 66C, Ed. P. Vincenzini (Elsevier, 1991) p. 2171. [ Links ]
[7]. S. A. Pianaro, P. R. Bueno, E. Longo and J. A. Varela, J. Mater. Sci. Lett. 14 692 (1995). [ Links ]
[8]. P. N. Santhosh, H. S. Potdar and S. K. Date, J. Mater. Res. 12, 326 (1997). [ Links ]
[9]. R. Parra, M. A. Ponce, C. M. Aldao and M. S. Castro J. Eur. Ceram. Soc. 27, 3907 (2007). [ Links ]
[10]. S. R. Dhage and V. Ravi, Appl. Phys. Lett. 83, 4539 (2003). [ Links ]
[11].R. Metz, D. Koumeir, J. Morel, J. Pansiot, M. Houabes and M. Hassanzadeh, J. Eur. Ceram. Soc. 28, 829 (2008). [ Links ]
[12]. A. B. Glot, in: Ceramic Materials Research Trends, Ed. P. B. Lin (Nova Science Publishers, Inc., New York, 2007) p. 227. [ Links ]
[13].P. R. Bueno, J. A. Varela and E. Longo, J. Eur. Ceram. Soc. 28, 505(2008). [ Links ]
[14].R. Einzinger, Appl. Surf. Sci. 3, 390 (1979). [ Links ]
[15].G. D. Mahan, L. M. Levinson and H. R. Philipp, J.Appl.Phys. 50, 2799(1979). [ Links ]
[16].G. E. Pike, in: Grain Boundaries in Semiconductors, Eds. H. J. Leamy, G. E. Pike, C. H. Seager (North-Holland, New York, 1982) p. 369. [ Links ]
[17].A. I. Ivon, A. B. Glot, I. M. Chernenko, in: Fourth Euro-Ceramics. V.5. Electroceramics, Ed. G. Gusmano and E. Traversa (Gruppo Editoriale Faenza Editrice, Faenza, Italy, 1995) p. 475. [ Links ]
[18]. A. B. Glot, J. Mater. Sci. 41, 5709 (2006). [ Links ]
[19]. A. B. Glot, A. V. Gaponov and A. P. Sandoval-García, Phys. B: Condensed Matter, 405, 705 (2010). [ Links ]
[20].A. I. Ivon, A. B. Glot, A. V. Gaponov and S. V. Mazurik, Key Eng. Mater. 132, 1289 (1997). [ Links ]
[21]. A. I. Ivon, Inorg. Mater., 36, 1074(2000). [ Links ]
[22].R. Metz, J. Morel, M. Houabes, J. Pansiot and M. Hassanzadeh, J. Mater. Sci. 42, 10284 (2007). [ Links ]
[23].M. A. Ramirez, W. Bassi, P. R. Bueno, E. Longo and J.A. Varela, J. Phys. D: Appl. Phys. 41, 122002 (2008). [ Links ]
[24].M. A. Ramirez, W. Bassi, R. Parra, P. R. Bueno, E. Longo and J.A. Varela, J. Am. Ceram. Soc. 91, 2402 (2008). [ Links ]
[25]. Z.-Y. Lu, Z. Chen and J.-Q. Wu, J. Ceram. Soc. Japan 117, 851 (2009). [ Links ]
[26]. A. B. Glot, A. N. Bondarchuk, A. I. Ivon, L. Fuentes, J. A. Aguilar-Martinez, M. I. Pech-Canul and N. Pineda-Aguilar, in: XIX Int. Conf. on Extractive Metallurgy, Saltillo, Coah., Mexico (May 18-21, 2010, paper 52) p. 572. [ Links ]
[27]. A. V. Gaponov, A. B. Glot, A. I. Ivon and R. Bulpett, Phys. Chem. Solid State, 11, 738 (2010). [ Links ]
[28]. K. Eda, J.Appl.Phys. 50, 4436 (1979). [ Links ]
[29]. A. Ya. Karachentsev and Yu. N. Potashev, Electronnaya Tekhnika. Ser.5. Radiodetali i Radiocomponenty 4, 37 (1973). [ Links ]
[30]. A. B. Glot, Advances in Varistor Technology. Ceramic Transactions, 3, Ed. L. M. Levinson (Am. Ceram. Soc., Westerville, OH, 1989) p. 194. [ Links ]
[31]. M A Ramirez, M Cilense, P R Bueno, E Longo and J A Varela. J. Phys. D: Appl. Phys. 42, 015503 (2009). [ Links ]
[32]. A. B. Glot and I. A. Skuratovsky, Mater. Chem. Phys. 99, 487 (2006). [ Links ]
[33]. L. M. Levinson and H. R. Philipp, J.Appl.Phys. 47, 3116 (1976). [ Links ]
[34]. W. G. Carlson and T. K. Gupta, J. Appl. Phys. 53, 5746 (1982). [ Links ]
[35]. H. R. Philipp and L. M. Levinson, J. Appl. Phys. 47, 1112 (1976). [ Links ]
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The Editors thank to the Physics Department of the Centro de Investigación y de Estudios Avanzados del IPN for the support in the publication of this issue, and the cooperation of M en C. Alejandra García Sotelo and Eng. Erasmo Gómez.
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