<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>1665-3521</journal-id>
<journal-title><![CDATA[Superficies y vacío]]></journal-title>
<abbrev-journal-title><![CDATA[Superf. vacío]]></abbrev-journal-title>
<issn>1665-3521</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S1665-35212009000400001</article-id>
<title-group>
<article-title xml:lang="es"><![CDATA[Desarrollo de un sistema para obtener ciclos de histéresis de materiales ferroeléctricos utilizando un potenciostato]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Guillén-Rodríguez]]></surname>
<given-names><![CDATA[J.]]></given-names>
</name>
<xref ref-type="aff" rid="A01"/>
<xref ref-type="aff" rid="A02"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Zapata-Navarro]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="A01"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Zapata-Torres]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<xref ref-type="aff" rid="A01"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Márquez-Herrera]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="A01"/>
</contrib>
</contrib-group>
<aff id="A01">
<institution><![CDATA[,Instituto Politécnico Nacional Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada Unidad Legaria]]></institution>
<addr-line><![CDATA[México D.F.]]></addr-line>
<country>México</country>
</aff>
<aff id="A02">
<institution><![CDATA[,Instituto Tecnológico y de Estudios Superiores de Monterrey Campus Tampico ]]></institution>
<addr-line><![CDATA[Altamira Tamaulipas]]></addr-line>
<country>México</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>12</month>
<year>2009</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>12</month>
<year>2009</year>
</pub-date>
<volume>22</volume>
<numero>4</numero>
<fpage>1</fpage>
<lpage>5</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S1665-35212009000400001&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S1665-35212009000400001&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S1665-35212009000400001&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="es"><p><![CDATA[Se implementó un sistema para medir propiedades ferroeléctricas utilizando un potenciostato/galvanostato (POT/GAL) en un circuito Tower-Sawyer modificado. Una tarjeta de adquisición de datos y una computadora personal fueron usadas para controlar de manera remota el POT/GAL y a través de los puertos análogos y digitales de entrada y salida fueron programados y leídos el potencial y corriente en las muestras. El POT/GAL fue utilizado debido a su muy alta impedancia de entrada comparada con los circuitos hechos en laboratorios para obtener los ciclos de histéresis de muestras ferroeléctricas. Se desarrolló un software que controla completamente el POT/GAL, así como la amplitud, frecuencia y el tipo de señal aplicada a la muestra. Obtiene los ciclos de histéresis de la polarización espontánea versus potencial eléctrico y despliega los valores del potencial coercitivo y polarización remanente. Para comprobar la funcionalidad de nuestro sistema se caracterizaron capacitores ferroeléctricos de material Pb(Zr xTi1-x)O3 conocido también como PZT (4,000 y 10,000&#956;² de área y 255 nm de espesor) a diferente potencial(1-9 volts) y frecuencia( 1-45 Hz ) y se compararon los resultados con las mediciones en un equipo de Radiant Technologies Inc. resultando buena concordancia entre ambas mediciones.]]></p></abstract>
<abstract abstract-type="short" xml:lang="en"><p><![CDATA[A novel system to measure ferroelectric properties using a potensiostat/galvanostat (POT/GAL) with a modified Tower-Sawyer circuit was implemented. A data acquisition card and a desktop computer were used to control the POT/GAL. The DAQ's analog and digital input/outputs ports were programmed for read the potential and current in the samples. The POT/GAL was used because it has a higher input impedance than homemade circuits used in laboratories, to obtain hysteresis loops of ferroelectric samples. A software was developed to fully control the POT/GAL, it also controls the amplitude and frequency of the potential applied to the samples. It obtains the spontaneous polarization versus electric field hysteresis loops, and display the values of coercive potential and remanent polarization. To explore the functionality or our system, commercial PZT (Lead Zirconate Titanate) ferroelectric capacitors (4,000 y 10,000&#956;2 area, 255nm thickness) were characterized. The results of polarization versus electric potential of these capacitors for different frequencies (1-45 Hz) and different excitation voltages (1-9 volts) were made, the samples were also characterized with a commercial equipment from Radiant Technology Inc. The results showed a good agreement in both equipment.]]></p></abstract>
<kwd-group>
<kwd lng="es"><![CDATA[Histéresis]]></kwd>
<kwd lng="es"><![CDATA[Ferroeléctricos]]></kwd>
<kwd lng="es"><![CDATA[Potenciostato]]></kwd>
<kwd lng="en"><![CDATA[Hysteresis]]></kwd>
<kwd lng="en"><![CDATA[Ferroelectric]]></kwd>
<kwd lng="en"><![CDATA[Potentiostat]]></kwd>
</kwd-group>
</article-meta>
</front><body><![CDATA[ <p align="center"><font face="verdana" size="4"><b>Desarrollo de un sistema para obtener ciclos de hist&eacute;resis de materiales ferroel&eacute;ctricos utilizando un potenciostato</b></font></p>     <p align="center"><font face="verdana" size="2">&nbsp;</font></p>     <p align="center"><font face="verdana" size="2"><b>J. Guill&eacute;n&#150;Rodr&iacute;guez*, A. Zapata&#150;Navarro, M. Zapata&#150;Torres, A. M&aacute;rquez&#150;Herrera</b></font></p>     <p align="justify"><font face="verdana" size="2">&nbsp;</font></p>     <p align="justify"><font face="verdana" size="2"><i>CICATA&#150;IPN Unidad Legaria, Legaria 694, Col. Irrigaci&oacute;n, Delegaci&oacute;n Miguel Hidalgo, C.P. 11500, M&eacute;xico D.F., M&eacute;xico </i></font></p>     <p align="justify"><font face="verdana" size="2"><i>I.T.E.S.M. Campus Tampico, Puerto Industrial, Altamira, Tamaulipas, M&eacute;xico, C.P. 89600. * </i><a href="mailto:jguillenrdz@hotmail.com">jguillenrdz@hotmail.com</a></font></p>     <p align="justify"><font face="verdana" size="2">&nbsp;</font></p>     <p align="justify"><font face="verdana" size="2">Recibido: 20 de agosto de 2009.    <br> Aceptado: 8 de octubre de 2009.</font></p>     <p align="justify"><font face="verdana" size="2">&nbsp;</font></p>     ]]></body>
<body><![CDATA[<p align="justify"><font face="verdana" size="2"><b>Resumen</b></font></p>     <p align="justify"><font face="verdana" size="2">Se implement&oacute; un sistema para medir propiedades ferroel&eacute;ctricas utilizando un potenciostato/galvanostato (POT/GAL) en un circuito Tower&#150;Sawyer modificado. Una tarjeta de adquisici&oacute;n de datos y una computadora personal fueron usadas para controlar de manera remota el POT/GAL y a trav&eacute;s de los puertos an&aacute;logos y digitales de entrada y salida fueron programados y le&iacute;dos el potencial y corriente en las muestras. El POT/GAL fue utilizado debido a su muy alta impedancia de entrada comparada con los circuitos hechos en laboratorios para obtener los ciclos de hist&eacute;resis de muestras ferroel&eacute;ctricas. Se desarroll&oacute; un software que controla completamente el POT/GAL, as&iacute; como la amplitud, frecuencia y el tipo de se&ntilde;al aplicada a la muestra. Obtiene los ciclos de hist&eacute;resis de la polarizaci&oacute;n espont&aacute;nea versus potencial el&eacute;ctrico y despliega los valores del potencial coercitivo y polarizaci&oacute;n remanente. Para comprobar la funcionalidad de nuestro sistema se caracterizaron capacitores ferroel&eacute;ctricos de material Pb(Zr<sub>x</sub>Ti<sub>1&#150;x</sub>)O<sub>3</sub> conocido tambi&eacute;n como PZT (4,000 y 10,000&#956;<sup>2</sup> de &aacute;rea y 255 nm de espesor) a diferente potencial(1&#150;9 volts) y frecuencia( 1&#150;45 Hz ) y se compararon los resultados con las mediciones en un equipo de Radiant Technologies Inc. resultando buena concordancia entre ambas mediciones.</font></p>     <p align="justify"><font face="verdana" size="2"><b>Palabras clave: </b>Hist&eacute;resis; Ferroel&eacute;ctricos; Potenciostato.</font></p>     <p align="justify"><font face="verdana" size="2">&nbsp;</font></p>     <p align="justify"><font face="verdana" size="2"><b>Abstract</b></font></p>     <p align="justify"><font face="verdana" size="2">A novel system to measure ferroelectric properties using a potensiostat/galvanostat (POT/GAL) with a modified Tower&#150;Sawyer circuit was implemented. A data acquisition card and a desktop computer were used to control the POT/GAL. The DAQ's analog and digital input/outputs ports were programmed for read the potential and current in the samples. The POT/GAL was used because it has a higher input impedance than homemade circuits used in laboratories, to obtain hysteresis loops of ferroelectric samples. A software was developed to fully control the POT/GAL, it also controls the amplitude and frequency of the potential applied to the samples. It obtains the spontaneous polarization versus electric field hysteresis loops, and display the values of coercive potential and remanent polarization. To explore the functionality or our system, commercial PZT (Lead Zirconate Titanate) ferroelectric capacitors (4,000 y 10,000&#956;<sup>2</sup> area, 255nm thickness) were characterized. The results of polarization versus electric potential of these capacitors for different frequencies (1&#150;45 Hz) and different excitation voltages (1&#150;9 volts) were made, the samples were also characterized with a commercial equipment from Radiant Technology Inc. The results showed a good agreement in both equipment.</font></p>     <p align="justify"><font face="verdana" size="2"><b>Keywords: </b>Hysteresis; Ferroelectric; Potentiostat.</font></p>     <p align="justify"><font face="verdana" size="2">&nbsp;</font></p>     <p align="justify"><font face="verdana" size="2"><a href="/pdf/sv/v22n4/v22n4a1.pdf" target="_blank">DESCARGAR ART&Iacute;CULO EN FORMATO PDF</a></font></p>     <p align="justify"><font face="verdana" size="2">&nbsp;</font></p>     ]]></body>
<body><![CDATA[<p align="justify"><font face="verdana" size="2"><b>Agradecimientos</b></font></p>     <p align="justify"><font face="verdana" size="2">Agradecemos a la Secretaria de Investigaci&oacute;n y Posgrado (Proyecto SIP 20090484) por su apoyo a este trabajo.</font></p>     <p align="justify"><font face="verdana" size="2">&nbsp;</font></p>     <p align="justify"><font face="verdana" size="2"><b>Referencias</b></font></p>     <!-- ref --><p align="justify"><font face="verdana" size="2">&#91;1&#93;. D. Damjanovic, P. Muralt, and N. Setter, IEEE Sensors J., <b>1, </b>191 (2001).    &nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;[&#160;<a href="javascript:void(0);" onclick="javascript: window.open('/scielo.php?script=sci_nlinks&ref=9756533&pid=S1665-3521200900040000100001&lng=','','width=640,height=500,resizable=yes,scrollbars=1,menubar=yes,');">Links</a>&#160;]<!-- end-ref --></font></p>     <!-- ref --><p align="justify"><font face="verdana" size="2">&#91;2&#93;. E. Supriyanto, H. Goebel, "Characterization of Ferroelectric Caacitors over Wide Frequency Range", ICM 2003, Dec 9&#150;11, pp.283&#150;286, Cayro Egypt.    &nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;[&#160;<a href="javascript:void(0);" onclick="javascript: window.open('/scielo.php?script=sci_nlinks&ref=9756535&pid=S1665-3521200900040000100002&lng=','','width=640,height=500,resizable=yes,scrollbars=1,menubar=yes,');">Links</a>&#160;]<!-- end-ref --></font></p>     <!-- ref --><p align="justify"><font face="verdana" size="2">&#91;3&#93;. V. Meyer, JM. Sallase , P. Fazan, D. Bard, F. Pecheux. Solid&#150;State Electronics <b>47 </b>1479 (2003).    &nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;[&#160;<a href="javascript:void(0);" onclick="javascript: window.open('/scielo.php?script=sci_nlinks&ref=9756537&pid=S1665-3521200900040000100003&lng=','','width=640,height=500,resizable=yes,scrollbars=1,menubar=yes,');">Links</a>&#160;]<!-- end-ref --> </font></p>     ]]></body>
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