<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>1665-3521</journal-id>
<journal-title><![CDATA[Superficies y vacío]]></journal-title>
<abbrev-journal-title><![CDATA[Superf. vacío]]></abbrev-journal-title>
<issn>1665-3521</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S1665-35212005000200007</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Photoluminescence and cathodoluminescence characteristics of SiO2 and SRO films implanted with Si]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Flores Gracia]]></surname>
<given-names><![CDATA[F.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Aceves]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Carrillo]]></surname>
<given-names><![CDATA[J.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Domínguez]]></surname>
<given-names><![CDATA[C.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Falcony]]></surname>
<given-names><![CDATA[C.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Benemérita Universidad Autónoma de Puebla Instituto de Ciencias (ICUAP) Centro de Investigaciones en Dispositivos Semiconductores]]></institution>
<addr-line><![CDATA[Puebla Puebla]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Instituto Nacional de Astrofísica, Óptica y Electrónica  ]]></institution>
<addr-line><![CDATA[ Puebla]]></addr-line>
<country>México</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,Centro Nacional de Microelectrónica  ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>España</country>
</aff>
<aff id="Af4">
<institution><![CDATA[,Centro de Investigación y de Estudios Avanzados  Departamento de Física]]></institution>
<addr-line><![CDATA[ México D.F.]]></addr-line>
<country>México</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>00</month>
<year>2005</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>00</month>
<year>2005</year>
</pub-date>
<volume>18</volume>
<numero>2</numero>
<fpage>7</fpage>
<lpage>13</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S1665-35212005000200007&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S1665-35212005000200007&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S1665-35212005000200007&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract Silicon rich oxide films (SRO) were obtained by silicon implantation in silicon dioxide and PE - LPCVD techniques. Also, PECVD and LPCVD SRO films were implanted with silicon to get super-enriched SRO. Photo- and Cathodo- Luminescence (PL and CL) studies of these materials are presented. All the samples show similar bands related with an excess of silicon, but with different behavior in the intensity of the signal. PL results from silicon implanted LPCVD films show an emission stronger than the emission from the other films under study. The strongest PL intensity is related with an optimum annealing time and an optimum silicon excess, and consequently with an optimum size of the nanocrystals.]]></p></abstract>
<abstract abstract-type="short" xml:lang="es"><p><![CDATA[Resumen Se obtienen películas de oxido rico en silicio (SRO) por implantación de silicio en dióxido de silicio y por técnicas PE-LPCVD. También las películas PECVD y LPCVD se implantan con silicio para obtener SRO uperenriquecido. Se presentan estudios de Foto y Cátodoluminiscencia (Pl y CL) de estos materiales. Todas las muestras muestran bandas similares relacionadas cpon un exceso de silicio, pero con diferente comportamiento en la intensidad de la señal. Los resultados de PL de las películas LPCVD implantadas con silicio muestran una emisión más intensa que la emisión de las otras pelçículas bajo estudio. La mayor intensidad de luminiscencia está relacionada con un tiempo de aleación óptimo y con un exceso de silicio óptimo, y consecuentemente con tamaño óptimo de los nanocristales.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[Silicon rich oxide]]></kwd>
<kwd lng="en"><![CDATA[Photoluminescence]]></kwd>
<kwd lng="en"><![CDATA[Nanocrystals]]></kwd>
<kwd lng="es"><![CDATA[Oxido rico en silicio]]></kwd>
<kwd lng="es"><![CDATA[Fotoluminiscencia]]></kwd>
<kwd lng="es"><![CDATA[Nanocristales]]></kwd>
</kwd-group>
</article-meta>
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