<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>1665-3521</journal-id>
<journal-title><![CDATA[Superficies y vacío]]></journal-title>
<abbrev-journal-title><![CDATA[Superf. vacío]]></abbrev-journal-title>
<issn>1665-3521</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S1665-35212005000200001</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Méndez-García]]></surname>
<given-names><![CDATA[V.H.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Lastras-Martínez]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Yu Gorbachev]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Mishurnyi]]></surname>
<given-names><![CDATA[V.A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Anda]]></surname>
<given-names><![CDATA[F. de]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[López-López]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Calixto-Rodríguez]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Universidad Autónoma de San Luis Potosí Facultad de Ingeniería Instituto de Investigación en Comunicación Óptica]]></institution>
<addr-line><![CDATA[San Luis Potosí San Luis Potosí]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Instituto Politécnico Nacional Centro de Investigación y de Estudios Avanzados Physics Department]]></institution>
<addr-line><![CDATA[ México, D.F.]]></addr-line>
<country>Mexico</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>00</month>
<year>2005</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>00</month>
<year>2005</year>
</pub-date>
<volume>18</volume>
<numero>2</numero>
<fpage>1</fpage>
<lpage>6</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S1665-35212005000200001&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S1665-35212005000200001&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S1665-35212005000200001&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract We studied the growth of self-assembled InAs quantum dots (QDs) on GaAs (100) surfaces subjected to an in-situ annealing treatment. The treatment consists in exposing the GaAs buffer layer surface at a high temperature for a few seconds with the As4-shutter closed. The exposure of GaAs at high temperature leads to the formation of nanometric scale pits plus a Ga-rich surface. The annealing modifies in such a way the GaAs surface that the strain mediated transition from two- to three -dimensional InAs growth takes place at a much larger InAs thickness than the obtained under standard conditions. Moreover, the resulting QDs obtained at the equivalent InAs thickness of 3.4 monolayers (MLs) on the annealed GaAs surfaces presented a smaller size dispersion as compared with the conventionally grown QDs. The photoluminescence (PL) emission spectra corresponding to the samples subjected to the in-situ thermal treatment observed a reduction in the full width at half medium (FWHM) and a clear correlation between the dots size increase and the emission peak red-shift. The new-flanged nucleation propitiated by the annealing process was explained in terms of a generation of an intermediated InGaAs thin film created by Ga-clusters on an atomically rough surface and the impinging In atoms.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[Nanostructures]]></kwd>
<kwd lng="en"><![CDATA[Quantum dots]]></kwd>
<kwd lng="en"><![CDATA[Molecular beam epitaxy]]></kwd>
<kwd lng="en"><![CDATA[Semiconducting III-V materials]]></kwd>
</kwd-group>
</article-meta>
</front><back>
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