<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>1405-7743</journal-id>
<journal-title><![CDATA[Ingeniería, investigación y tecnología]]></journal-title>
<abbrev-journal-title><![CDATA[Ing. invest. y tecnol.]]></abbrev-journal-title>
<issn>1405-7743</issn>
<publisher>
<publisher-name><![CDATA[Universidad Nacional Autónoma de México, Facultad de Ingeniería]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S1405-77432016000200237</article-id>
<title-group>
<article-title xml:lang="es"><![CDATA[Prototipo sensor de imagen CMOS con arquitectura de modulación a nivel columna]]></article-title>
<article-title xml:lang="en"><![CDATA[A Prototype CMOS Image Sensor with a Column-Level Modulation Architecture]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Garduza-González]]></surname>
<given-names><![CDATA[Sergio]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Gómez-Castañeda]]></surname>
<given-names><![CDATA[Felipe]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Moreno-Cadenas]]></surname>
<given-names><![CDATA[José Antonio]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Ponce-Ponce]]></surname>
<given-names><![CDATA[Víctor Hugo]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Instituto Politécnico Nacional UPIITA Departamento de Ingeniería]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,IPN Centro de Investigación y de Estudios Avanzados Departamento de Ingeniería Eléctrica]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,IPN Centro de Investigación y de Estudios Avanzados Departamento de Ingeniería Eléctrica]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af4">
<institution><![CDATA[,Instituto Politécnico Nacional CIC ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Mexico</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>06</month>
<year>2016</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>06</month>
<year>2016</year>
</pub-date>
<volume>17</volume>
<numero>2</numero>
<fpage>237</fpage>
<lpage>249</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S1405-77432016000200237&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S1405-77432016000200237&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S1405-77432016000200237&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="es"><p><![CDATA[Resumen: Un sensor de imagen CMOS se compone de matriz de sensado, lógica de selección fila/columna y convertidor analógico-digital. El desempeño de este último influye en el desempeño global del sensor de imagen. Una alternativa estudiada en los últimos años, es la arquitectura de sobremuestreo, que a diferencia de la tradicional arquitectura Nyquist, alcanza la misma razón señal a ruido, pero con cuantificador de 1-bit. Esta importante ventaja es atractiva para depender menos de las imperfecciones tecnológicas de los circuitos. Este artículo presenta el diseño de un prototipo sensor de imagen CMOS con prestaciones básicas para fotografía digital, que incluye matriz de fotodiodos, circuitos de selección fila/columna y modulador sigma-delta a nivel de 4-columnas. La modulación sigma-delta aprovecha la ventaja del sobremuestreo, disminuye el ruido de cuantificación en banda, es robusto y compatible con dispositivos MOSFET. Para el diseño del modulador se optimizó la razón señal a ruido, a través de un modelo comportamental. Todos los circuitos se implementaron con reglas de diseño de señal mixta y se fabricaron en un solo chip con tecnología CMOS estándar. Los resultados de mediciones e imágenes obtenidas con el prototipo muestran que la metodología de diseño que se utilizó es fiable. Este prototipo es un circuito VLSI y es la base del diseño de nuevos sistemas de detección fotónica para diversas aplicaciones.]]></p></abstract>
<abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract: A CMOS image sensors is composed of array pixel, row/column selection logic and analog to digital converter. The performance of this latter influences the image sensor overall performance. An alternative studied in recent years, is the oversampling architecture, unlike traditional Nyquist architecture, has the same signal to noise ratio, but with 1-bit quantizer. It is major advantage is attractive to reduce dependence on technological imperfections of the circuits. This paper presents the design of a prototype CMOS image sensor with basic performance to digital still-photography, which includes sigma-delta modulator at the 4-columns. The sigma -delta modulation takes advantage of oversampling, robustness and compatibility with MOSFET devices. To design the modulator, the SNR was optimized, through a model which includes noise sources. All circuits were implemented with mixed signal design rules and manufactured on a single chip using standard CMOS technology. The results of measurements and images obtained with the prototype show that the design methodology used is reliable. This prototype is a VLSI circuit and is the basis for the design of the new photodetection systems in other applications.]]></p></abstract>
<kwd-group>
<kwd lng="es"><![CDATA[convertidor analógico-digital de sobremuestreo]]></kwd>
<kwd lng="es"><![CDATA[densidad espectral de potencia]]></kwd>
<kwd lng="es"><![CDATA[modelo comportamental]]></kwd>
<kwd lng="es"><![CDATA[modulación sigma-delta]]></kwd>
<kwd lng="es"><![CDATA[razón señal a ruido de cuantificación]]></kwd>
<kwd lng="es"><![CDATA[ruido de cuantificación]]></kwd>
<kwd lng="es"><![CDATA[sensor de imagen CMOS]]></kwd>
<kwd lng="es"><![CDATA[transistor de efecto de campo de metal-óxido-semiconductor]]></kwd>
<kwd lng="en"><![CDATA[oversampling analog-digital converter]]></kwd>
<kwd lng="en"><![CDATA[power spectral density]]></kwd>
<kwd lng="en"><![CDATA[behavioral model]]></kwd>
<kwd lng="en"><![CDATA[sigma-delta modulation signal-to-quantizer noise-ratio]]></kwd>
<kwd lng="en"><![CDATA[quantizer noise]]></kwd>
<kwd lng="en"><![CDATA[CMOS image sensor]]></kwd>
<kwd lng="en"><![CDATA[metal-oxide-semiconductor field effect transistor]]></kwd>
</kwd-group>
</article-meta>
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