<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0035-001X</journal-id>
<journal-title><![CDATA[Revista mexicana de física]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. mex. fis.]]></abbrev-journal-title>
<issn>0035-001X</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Física]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0035-001X2024000200108</article-id>
<article-id pub-id-type="doi">10.31349/revmexfis.70.021004</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Accurate parameter estimation of Au/GaN/GaAs schottky diode model using grey wolf optimization]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
<xref ref-type="aff" rid="Aaf"/>
<xref ref-type="aff" rid="A a"/>
<xref ref-type="aff" rid="A4"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Douara]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Helal]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Memdouh Younsi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Amrani]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Abbas]]></surname>
<given-names><![CDATA[I. E.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Comini]]></surname>
<given-names><![CDATA[E.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Benamara]]></surname>
<given-names><![CDATA[Z.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Université Djillali Liabès de Sidi Bel Abbés Laboratoire de Micro-Electronique Appliquée ]]></institution>
<addr-line><![CDATA[Sidi Bel Abbés ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Tissemsilt University Faculty of Science and Technology ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,University of Djelfa Telecommunications and Smart Systems Laboratory ]]></institution>
<addr-line><![CDATA[Djelfa ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af4">
<institution><![CDATA[,University of Brescia Sensor Laboratory ]]></institution>
<addr-line><![CDATA[Brescia ]]></addr-line>
<country>Italy</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>04</month>
<year>2024</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>04</month>
<year>2024</year>
</pub-date>
<volume>70</volume>
<numero>2</numero>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S0035-001X2024000200108&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S0035-001X2024000200108&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S0035-001X2024000200108&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract The Au/GaN/GaAs Schottky diode is a fundamental electronic component with versatile applications. In this study we delve into the parameter estimation of Au/GaN/GaAs Schottky diodes using the Grey Wolf Optimizer (GWO) algorithm. Our research encompasses experimental procedures, mathematical modeling, and optimization techniques to extract critical electrical parameters, including the ideality factor (n), Schottky barrier height (&#966;bn), and series resistance (RS). The primary aim is to enhance our comprehension of the behavior of Au/GaN/GaAs Schottky diodes and showcase the effectiveness of GWO in achieving precise parameter estimates. These diodes, featuring metal-semiconductor junctions, play pivotal roles in electronics, necessitating accurate parameter determination for optimized functionality. The effectiveness of the GWO algorithm was examined through a comparative analysis, employing analytical techniques pioneered by Cheung and Cheung. This study sought to assess the algorithm&#8217;s performance and accuracy in parameter estimation for Au/GaN/GaAs Schottky diodes, providing valuable insights into its practical applicability in electronic device characterization and optimization.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[Schottky diodes]]></kwd>
<kwd lng="en"><![CDATA[Grey Wolf Optimization]]></kwd>
<kwd lng="en"><![CDATA[Electrical measurement]]></kwd>
<kwd lng="en"><![CDATA[Parameter estimation]]></kwd>
<kwd lng="en"><![CDATA[Gan]]></kwd>
<kwd lng="en"><![CDATA[GaAs]]></kwd>
</kwd-group>
</article-meta>
</front><back>
<ref-list>
<ref id="B1">
<label>1</label><nlm-citation citation-type="book">
<collab>Bhattacharya Pallab</collab>
<source><![CDATA[Semiconductor optoelectronic devices]]></source>
<year>1997</year>
<edition>2</edition>
<publisher-loc><![CDATA[River, NJ, United States ]]></publisher-loc>
<publisher-name><![CDATA[Prentice-Hall, Inc.]]></publisher-name>
</nlm-citation>
</ref>
<ref id="B2">
<label>2</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Sze]]></surname>
<given-names><![CDATA[S. M.]]></given-names>
</name>
</person-group>
<source><![CDATA[Semiconductor Devices: Physics and Technology]]></source>
<year>2016</year>
</nlm-citation>
</ref>
<ref id="B3">
<label>3</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode]]></article-title>
<source><![CDATA[The European Physical Journal Applied Physics]]></source>
<year>2015</year>
<volume>72</volume>
<numero>1</numero>
<issue>1</issue>
</nlm-citation>
</ref>
<ref id="B4">
<label>4</label><nlm-citation citation-type="book">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Jaeger]]></surname>
<given-names><![CDATA[R. C.]]></given-names>
</name>
<name>
<surname><![CDATA[Travis]]></surname>
<given-names><![CDATA[Blalock N.]]></given-names>
</name>
<name>
<surname><![CDATA[Benjamin]]></surname>
<given-names><![CDATA[Blalock J.]]></given-names>
</name>
</person-group>
<source><![CDATA[Microelectronic circuit design]]></source>
<year>1997</year>
<publisher-loc><![CDATA[New York ]]></publisher-loc>
<publisher-name><![CDATA[McGraw-Hill]]></publisher-name>
</nlm-citation>
</ref>
<ref id="B5">
<label>5</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Kacha]]></surname>
<given-names><![CDATA[A. H.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs]]></article-title>
<source><![CDATA[Superlattices Microstruct]]></source>
<year>2015</year>
<volume>83</volume>
<page-range>827-33</page-range></nlm-citation>
</ref>
<ref id="B6">
<label>6</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Salvatore]]></surname>
<given-names><![CDATA[G. A.]]></given-names>
</name>
<name>
<surname><![CDATA[Yin]]></surname>
<given-names><![CDATA[L.]]></given-names>
</name>
<name>
<surname><![CDATA[Dai]]></surname>
<given-names><![CDATA[F.]]></given-names>
</name>
</person-group>
<source><![CDATA[Biodegradable Electronics]]></source>
<year>2023</year>
<page-range>1019-41</page-range></nlm-citation>
</ref>
<ref id="B7">
<label>7</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Optimal Estimation of Schottky Diode Parameters Using Advanced Swarm Intelligence Algorithms]]></article-title>
<source><![CDATA[Semiconductors]]></source>
<year>2020</year>
<volume>54</volume>
<numero>11</numero>
<issue>11</issue>
<page-range>1398-405</page-range></nlm-citation>
</ref>
<ref id="B8">
<label>8</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Optimal estimation of Schottky diode parameters using a novel optimization algorithm: Equilibrium optimizer]]></article-title>
<source><![CDATA[Superlattices Microstruct]]></source>
<year>2020</year>
<volume>146</volume>
<page-range>106665</page-range></nlm-citation>
</ref>
<ref id="B9">
<label>9</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Norde]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[A modified forward I - V plot for Schottky diodes with high series resistance]]></article-title>
<source><![CDATA[J Appl Phys]]></source>
<year>1979</year>
<volume>50</volume>
<numero>7</numero>
<issue>7</issue>
<page-range>5052-3</page-range></nlm-citation>
</ref>
<ref id="B10">
<label>10</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Cheung]]></surname>
<given-names><![CDATA[S. K.]]></given-names>
</name>
<name>
<surname><![CDATA[Cheung]]></surname>
<given-names><![CDATA[N. W.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Extraction of Schottky diode parameters from forward current-voltage characteristics]]></article-title>
<source><![CDATA[Appl Phys Lett]]></source>
<year>1986</year>
<volume>49</volume>
<numero>2</numero>
<issue>2</issue>
<page-range>85-7</page-range></nlm-citation>
</ref>
<ref id="B11">
<label>11</label><nlm-citation citation-type="confpro">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Karaboga]]></surname>
<given-names><![CDATA[N.]]></given-names>
</name>
<name>
<surname><![CDATA[Kockanat]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
<name>
<surname><![CDATA[Dogan]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
</person-group>
<source><![CDATA[Parameter determination of the Schottky barrier diode using by artificial bee colony algorithm]]></source>
<year>2011</year>
<conf-name><![CDATA[ 2011 International Symposium on Innovations in Intelligent Systems and Applications]]></conf-name>
<conf-loc> </conf-loc>
</nlm-citation>
</ref>
<ref id="B12">
<label>12</label><nlm-citation citation-type="confpro">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Lakehal]]></surname>
<given-names><![CDATA[B.]]></given-names>
</name>
<name>
<surname><![CDATA[Dibi]]></surname>
<given-names><![CDATA[Z.]]></given-names>
</name>
<name>
<surname><![CDATA[Lakhdar]]></surname>
<given-names><![CDATA[N.]]></given-names>
</name>
<name>
<surname><![CDATA[Dendouga]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<name>
<surname><![CDATA[Benhaya]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<source><![CDATA[Parameter determination of Schottky -barrier diode model using genetic algorithm]]></source>
<year>2011</year>
<conf-name><![CDATA[ 2011 International Conference on Communications, Computing and Control Applications (CCCA)]]></conf-name>
<conf-loc> </conf-loc>
</nlm-citation>
</ref>
<ref id="B13">
<label>13</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Ishaque]]></surname>
<given-names><![CDATA[K.]]></given-names>
</name>
<name>
<surname><![CDATA[Salam]]></surname>
<given-names><![CDATA[Z.]]></given-names>
</name>
<name>
<surname><![CDATA[Taheri]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
<name>
<surname><![CDATA[Shamsudin]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[A critical evaluation of EA computational methods for Photovoltaic cell parameter extraction based on two diode model]]></article-title>
<source><![CDATA[Solar Energy]]></source>
<year>2011</year>
<volume>85</volume>
<numero>9</numero>
<issue>9</issue>
<page-range>1768-79</page-range></nlm-citation>
</ref>
<ref id="B14">
<label>14</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Olikh]]></surname>
<given-names><![CDATA[O. Ya.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Review and test of methods for determination of the Schottky diode parameters]]></article-title>
<source><![CDATA[J Appl Phys]]></source>
<year>2015</year>
<volume>118</volume>
<numero>2</numero>
<issue>2</issue>
</nlm-citation>
</ref>
<ref id="B15">
<label>15</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Mirjalili]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
<name>
<surname><![CDATA[Mirjalili]]></surname>
<given-names><![CDATA[S. M.]]></given-names>
</name>
<name>
<surname><![CDATA[Lewis]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Grey Wolf Optimizer]]></article-title>
<source><![CDATA[Advances in Engineering Software]]></source>
<year>2014</year>
<volume>69</volume>
<page-range>46-61</page-range></nlm-citation>
</ref>
<ref id="B16">
<label>16</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Abushawish]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<name>
<surname><![CDATA[Jarndal]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Hybrid particle swarm optimization &lt; scp &gt; ¡ &lt; =scp &gt;grey wolf optimization based &lt; scp &gt;small-signal&lt; scp &gt; modeling applied to &lt; scp &gt; GaN &lt; =scp &gt; devices]]></article-title>
<source><![CDATA[International Journal of RF and Microwave Computer-Aided Engineering]]></source>
<year>2022</year>
<volume>32</volume>
<numero>5</numero>
<issue>5</issue>
</nlm-citation>
</ref>
<ref id="B17">
<label>17</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Bencherif]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
<name>
<surname><![CDATA[Dehimi]]></surname>
<given-names><![CDATA[L.]]></given-names>
</name>
<name>
<surname><![CDATA[Pezzimenti]]></surname>
<given-names><![CDATA[F.]]></given-names>
</name>
<name>
<surname><![CDATA[Della Corte]]></surname>
<given-names><![CDATA[F. G.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Improving the efficiency of a-Si:H/c-Si thin heterojunction solar cells by using both antireflection coating engineering and diffraction grating]]></article-title>
<source><![CDATA[Optik]]></source>
<year>2019</year>
<volume>182</volume>
<page-range>682-93</page-range><publisher-loc><![CDATA[Stuttg ]]></publisher-loc>
</nlm-citation>
</ref>
<ref id="B18">
<label>18</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Dogan]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Parameter Estimation of AI/p-Si Schottky Barrier Diode Using Different Meta-Heuristic Optimization Techniques]]></article-title>
<source><![CDATA[Symmetry]]></source>
<year>2022</year>
<volume>14</volume>
<numero>11</numero>
<issue>11</issue>
<publisher-loc><![CDATA[Basel ]]></publisher-loc>
</nlm-citation>
</ref>
<ref id="B19">
<label>19</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Bideux]]></surname>
<given-names><![CDATA[L.]]></given-names>
</name>
<name>
<surname><![CDATA[Monier]]></surname>
<given-names><![CDATA[G.]]></given-names>
</name>
<name>
<surname><![CDATA[Matolin]]></surname>
<given-names><![CDATA[V.]]></given-names>
</name>
<name>
<surname><![CDATA[Robert-Goumet]]></surname>
<given-names><![CDATA[C.]]></given-names>
</name>
<name>
<surname><![CDATA[Gruzza]]></surname>
<given-names><![CDATA[B.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[XPS study of the formation of ultrathin GaN film on GaAs(100)]]></article-title>
<source><![CDATA[Appl Surf Sci]]></source>
<year>2008</year>
<volume>254</volume>
<numero>13</numero>
<issue>13</issue>
<page-range>4150-3</page-range></nlm-citation>
</ref>
<ref id="B20">
<label>20</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Monier]]></surname>
<given-names><![CDATA[G.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source]]></article-title>
<source><![CDATA[Surf Sci]]></source>
<year>2012</year>
<volume>606</volume>
<numero>13-14</numero>
<issue>13-14</issue>
<page-range>1093-9</page-range></nlm-citation>
</ref>
<ref id="B21">
<label>21</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Hernández-Gutiérrez]]></surname>
<given-names><![CDATA[C. A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Characterization of n-GaN / p-GaAs NP heterojunctions]]></article-title>
<source><![CDATA[Superlattices Microstruct]]></source>
<year>2019</year>
<volume>136</volume>
</nlm-citation>
</ref>
<ref id="B22">
<label>22</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Suandon]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
<name>
<surname><![CDATA[Sanorpim]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
<name>
<surname><![CDATA[Yoodee]]></surname>
<given-names><![CDATA[K.]]></given-names>
</name>
<name>
<surname><![CDATA[Onabe]]></surname>
<given-names><![CDATA[K.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Effect of growth temperature on polytype transition of GaN from zincblende to wurtzite]]></article-title>
<source><![CDATA[Thin Solid Films]]></source>
<year>2007</year>
<volume>515</volume>
<numero>10</numero>
<issue>10</issue>
<page-range>4393-6</page-range></nlm-citation>
</ref>
<ref id="B23">
<label>23</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Current-Voltage, Capacitance-Voltage-Temperature, and DLTS Studies of Ni-6H-SiC Schottky Diode]]></article-title>
<source><![CDATA[Semiconductors]]></source>
<year>2021</year>
<volume>55</volume>
<numero>4</numero>
<issue>4</issue>
<page-range>446-54</page-range></nlm-citation>
</ref>
<ref id="B24">
<label>24</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Helal]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[A new model of thermionic emission mechanism for non-ideal Schottky contacts and a method of extracting electrical parameters]]></article-title>
<source><![CDATA[The European Physical Journal Plus]]></source>
<year>2020</year>
<volume>135</volume>
<numero>11</numero>
<issue>11</issue>
</nlm-citation>
</ref>
<ref id="B25">
<label>25</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Abdelaziz]]></surname>
<given-names><![CDATA[Rabehi]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using LambertWFunction]]></article-title>
<source><![CDATA[JOURNAL OF NANO- AND ELECTRONIC PHYSICS]]></source>
<year>2022</year>
<volume>14</volume>
<numero>6</numero>
<issue>6</issue>
<page-range>6032-6</page-range></nlm-citation>
</ref>
<ref id="B26">
<label>26</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Helal]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[A study of current-voltage and capacitancevoltage characteristics of Au/n-GaAs and Au/GaN/n-GaAs Schottky diodes in wide temperature range]]></article-title>
<source><![CDATA[International Journal of Numerical Modelling: Electronic Networks, Devices and Fields]]></source>
<year>2020</year>
<volume>33</volume>
<numero>4</numero>
<issue>4</issue>
</nlm-citation>
</ref>
<ref id="B27">
<label>27</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Werner]]></surname>
<given-names><![CDATA[J. H.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Schottky barrier and pn-junctionI/V plots ? Small signal evaluation]]></article-title>
<source><![CDATA[Applied Physics A Solids and Surfaces]]></source>
<year>1988</year>
<volume>47</volume>
<numero>3</numero>
<issue>3</issue>
<page-range>291-300</page-range></nlm-citation>
</ref>
<ref id="B28">
<label>28</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Wang]]></surname>
<given-names><![CDATA[K.]]></given-names>
</name>
<name>
<surname><![CDATA[Ye]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[PARAMETER ESTIMATION OF SCHOTTKY-BARRIER DIODE MODEL BY PARTICLE SWARM OPTIMIZATION]]></article-title>
<source><![CDATA[International Journal of Modern Physics C]]></source>
<year>2009</year>
<volume>20</volume>
<numero>05</numero>
<issue>05</issue>
<page-range>687-99</page-range></nlm-citation>
</ref>
<ref id="B29">
<label>29</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Wang]]></surname>
<given-names><![CDATA[K.]]></given-names>
</name>
<name>
<surname><![CDATA[Ye]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Parameter determination of Schottkybarrier diode model using differential evolution]]></article-title>
<source><![CDATA[Solid State Electron]]></source>
<year>2009</year>
<volume>53</volume>
<numero>2</numero>
<issue>2</issue>
<page-range>234-40</page-range></nlm-citation>
</ref>
<ref id="B30">
<label>30</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Pradhan]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<name>
<surname><![CDATA[Roy]]></surname>
<given-names><![CDATA[P. K.]]></given-names>
</name>
<name>
<surname><![CDATA[Pal]]></surname>
<given-names><![CDATA[T.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Grey wolf optimization applied to economic load dispatch problems]]></article-title>
<source><![CDATA[International Journal of Electrical Power &amp; Energy Systems]]></source>
<year>2016</year>
<volume>83</volume>
<page-range>325-34</page-range></nlm-citation>
</ref>
<ref id="B31">
<label>31</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[DoC]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[xan, Parameter Estimation of AI/p-Si Schottky Barrier Diode Using Different Meta-Heuristic Optimization Techniques]]></article-title>
<source><![CDATA[Symmetry]]></source>
<year>2022</year>
<volume>14</volume>
<numero>11</numero>
<issue>11</issue>
<publisher-loc><![CDATA[Basel ]]></publisher-loc>
</nlm-citation>
</ref>
<ref id="B32">
<label>32</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Özavc&#305;]]></surname>
<given-names><![CDATA[E.]]></given-names>
</name>
<name>
<surname><![CDATA[Demirezen]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
<name>
<surname><![CDATA[Aydemir]]></surname>
<given-names><![CDATA[U.]]></given-names>
</name>
<name>
<surname><![CDATA[Alt&#305;ndal]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[A detailed study on current-voltage characteristics of Au/n-GaAs in wide temperature range]]></article-title>
<source><![CDATA[Sens Actuators A Phys]]></source>
<year>2013</year>
<volume>194</volume>
<page-range>259-68</page-range></nlm-citation>
</ref>
</ref-list>
</back>
</article>
