<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0035-001X</journal-id>
<journal-title><![CDATA[Revista mexicana de física]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. mex. fis.]]></abbrev-journal-title>
<issn>0035-001X</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Física]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0035-001X2023000401001</article-id>
<article-id pub-id-type="doi">10.31349/revmexfis.69.041001</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Improved electrical characteristics of Alx Ga1-xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Douara]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Baitiche]]></surname>
<given-names><![CDATA[O.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Hamdani]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Tissemsilt University Faculty of Science and Technology ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Université Djillali Liabés de Sidi Bel Abbés Laboratoire de Micro-électronique Appliquée ]]></institution>
<addr-line><![CDATA[Sidi Bel Abbés ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,Ammar Thlidji University of Laghouat Laboratory of Semi-conductors and Functional materials ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af4">
<institution><![CDATA[,Tissemsilt University Faculty of Science and Technology ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Algeria</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>08</month>
<year>2023</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>08</month>
<year>2023</year>
</pub-date>
<volume>69</volume>
<numero>4</numero>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S0035-001X2023000401001&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S0035-001X2023000401001&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S0035-001X2023000401001&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[This research aims to study the impact of some physical and structural parameters on the I-V characteristics of a high electron mobility transistors (HEMTs) based on Al x Ga 1-x N/GaN. We investigate the effect of the GaN buffer layer thickness and the impact of other properties of the materials such as aluminum mole fraction and doping concentration, the Al0.2Ga0.8N/GaN heterostructures with 400 nm of buffer layer and a layer doped with n = 4 × 1018 cm-3, for this structure we find the maximum saturation current of 420 mA/mm. The proposed model included GaN buffer layer and Al content were derived from our developed I-V characteristics. The proposed model is in excellent agreement with the simulated I-V characteristics and experimental results.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[HEMTs]]></kwd>
<kwd lng="en"><![CDATA[Al x Ga 1-x N/GaN]]></kwd>
<kwd lng="en"><![CDATA[buffer layer]]></kwd>
<kwd lng="en"><![CDATA[GaN]]></kwd>
</kwd-group>
</article-meta>
</front><back>
<ref-list>
<ref id="B1">
<label>[1]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Lee]]></surname>
<given-names><![CDATA[H.-P.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations]]></article-title>
<source><![CDATA[Scientific reports]]></source>
<year>2016</year>
<volume>6</volume>
<page-range>1</page-range></nlm-citation>
</ref>
<ref id="B2">
<label>[2]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Douara]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Optimization of two-dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors]]></article-title>
<source><![CDATA[International Journal of Numerical Modelling: Electronic Networks, Devices and Fields]]></source>
<year>2019</year>
<volume>32</volume>
</nlm-citation>
</ref>
<ref id="B3">
<label>[3]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Ziane]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[2D Modélisation Du Comportement De Nouvelle]]></article-title>
<source><![CDATA[Structure de Cellule Solaire]]></source>
<year>2016</year>
</nlm-citation>
</ref>
<ref id="B4">
<label>[4]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Douara]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[2-D optimisation current-voltage characteristics in AlGaN/GaN HEMTs with influence of passivation layer]]></article-title>
<source><![CDATA[International Journal of Ambient Energy]]></source>
<year>2021</year>
<volume>42</volume>
<page-range>1363</page-range></nlm-citation>
</ref>
<ref id="B5">
<label>[5]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode]]></article-title>
<source><![CDATA[The European Physical Journal Applied Physics]]></source>
<year>2015</year>
<volume>72</volume>
<page-range>10102</page-range></nlm-citation>
</ref>
<ref id="B6">
<label>[6]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Electrical and photoelectrical characteristics of Au/GaN/GaAs Schottky diode]]></article-title>
<source><![CDATA[Optik]]></source>
<year>2016</year>
<volume>127</volume>
<page-range>6412</page-range></nlm-citation>
</ref>
<ref id="B7">
<label>[7]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Simulation and experimental studies of illumination effects on the current transport of nitridated GaAs Schottky diode]]></article-title>
<source><![CDATA[Semiconductors]]></source>
<year>2018</year>
<volume>52</volume>
</nlm-citation>
</ref>
<ref id="B8">
<label>[8]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Bahat-Treidel]]></surname>
<given-names><![CDATA[E.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[AlGaN/GaN/AlGaN DH-HEMTs breakdown voltage enhancement using multiple grating field plates (MGFPs)]]></article-title>
<source><![CDATA[IEEE Transactions on Electron Devices]]></source>
<year>2010</year>
<volume>57</volume>
<page-range>1208</page-range></nlm-citation>
</ref>
<ref id="B9">
<label>[9]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Mohanbabu]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices]]></article-title>
<source><![CDATA[Solid-State Electronics]]></source>
<year>2014</year>
<volume>91</volume>
<page-range>44</page-range></nlm-citation>
</ref>
<ref id="B10">
<label>[10]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Biswas]]></surname>
<given-names><![CDATA[K.]]></given-names>
</name>
<name>
<surname><![CDATA[Ghoshhajra]]></surname>
<given-names><![CDATA[R.]]></given-names>
</name>
<name>
<surname><![CDATA[Sarkar]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis]]></article-title>
<source><![CDATA[HEMT Technology and Applications]]></source>
<year>2023</year>
<page-range>155-79</page-range></nlm-citation>
</ref>
<ref id="B11">
<label>[11]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Yang]]></surname>
<given-names><![CDATA[B.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Influence of Interface Roughness Scattering on Electron Mobility in GaAs-Al0. 3Ga0. 7 as Two Dimensional Electron Gas (2DEG) Heterostructures]]></article-title>
<source><![CDATA[MRS Online Proceedings Library (OPL)]]></source>
<year>1994</year>
<volume>355</volume>
</nlm-citation>
</ref>
<ref id="B12">
<label>[12]</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Douara]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[IV Characteristics Model For AlGaN/GaN HEMTs Using Tcad-Silvaco]]></article-title>
<source><![CDATA[]]></source>
<year>2015</year>
</nlm-citation>
</ref>
<ref id="B13">
<label>[13]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Helal]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Comparative study of ionic bombardment and heat treatment on the electrical behavior of Au/GaN/n-GaAs Schottky diodes]]></article-title>
<source><![CDATA[Superlattices and Microstructures]]></source>
<year>2019</year>
<volume>135</volume>
<page-range>106276</page-range></nlm-citation>
</ref>
<ref id="B14">
<label>[14]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Optimal estimation of Schottky diode parameters using a novel optimization algorithm: Equilibrium optimizer]]></article-title>
<source><![CDATA[Superlattices and Microstructures]]></source>
<year>2020</year>
<volume>146</volume>
<page-range>106665</page-range></nlm-citation>
</ref>
<ref id="B15">
<label>[15]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Ziane]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Frequency Dependent Capacitance and Conductance-Voltage Characteristics of Nitride GaAs Schottky Diode]]></article-title>
<source><![CDATA[Semiconductors]]></source>
<year>2021</year>
<volume>55</volume>
<page-range>51</page-range></nlm-citation>
</ref>
<ref id="B16">
<label>[16]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Yigletu]]></surname>
<given-names><![CDATA[F. M.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Compact charge-based physical models for current and capacitances in AlGaN/GaN HEMTs]]></article-title>
<source><![CDATA[IEEE Transactions on Electron Devices]]></source>
<year>2013</year>
<volume>60</volume>
<page-range>3746</page-range></nlm-citation>
</ref>
<ref id="B17">
<label>[17]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Douara]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<name>
<surname><![CDATA[Kermas]]></surname>
<given-names><![CDATA[N.]]></given-names>
</name>
<name>
<surname><![CDATA[Djellouli]]></surname>
<given-names><![CDATA[B.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Capacitance Models of AlGaN/GaN High Electron Mobility Transistors]]></article-title>
<source><![CDATA[International Journal of Nuclear and Quantum Engineering]]></source>
<year>2016</year>
<volume>10</volume>
<page-range>420</page-range></nlm-citation>
</ref>
<ref id="B18">
<label>[18]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Khan]]></surname>
<given-names><![CDATA[M. A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor]]></article-title>
<source><![CDATA[IEEE Electron Device Letters]]></source>
<year>2000</year>
<volume>21</volume>
<page-range>63</page-range></nlm-citation>
</ref>
<ref id="B19">
<label>[19]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Khandelwal]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
<name>
<surname><![CDATA[Fjeldly]]></surname>
<given-names><![CDATA[T. A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[A physics based compact model of I-V and C-V characteristics in AlGaN/GaN HEMT devices]]></article-title>
<source><![CDATA[Solid-State Electronics]]></source>
<year>2012</year>
<volume>76</volume>
<page-range>60</page-range></nlm-citation>
</ref>
<ref id="B20">
<label>[20]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Bernardini]]></surname>
<given-names><![CDATA[F.]]></given-names>
</name>
<name>
<surname><![CDATA[Fiorentini]]></surname>
<given-names><![CDATA[V.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Nonlinear macroscopic polarization in III-V nitride alloys]]></article-title>
<source><![CDATA[Phys. Rev. B.]]></source>
<year>2001</year>
<volume>64</volume>
<page-range>085207</page-range></nlm-citation>
</ref>
<ref id="B21">
<label>[21]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Delagebeaudeuf]]></surname>
<given-names><![CDATA[D.]]></given-names>
</name>
<name>
<surname><![CDATA[Linh]]></surname>
<given-names><![CDATA[N. T.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET]]></article-title>
<source><![CDATA[IEEE Transactions on Electron Devices]]></source>
<year>1982</year>
<volume>29</volume>
<page-range>955</page-range></nlm-citation>
</ref>
<ref id="B22">
<label>[22]</label><nlm-citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Nigam]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Effect of self-heating on electrical characteristics of AlGaN/GaN HEMT on Si (111) substrate]]></article-title>
<source><![CDATA[AIP Advances]]></source>
<year>2017</year>
<volume>7</volume>
<page-range>085015</page-range></nlm-citation>
</ref>
</ref-list>
</back>
</article>
