<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0035-001X</journal-id>
<journal-title><![CDATA[Revista mexicana de física]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. mex. fis.]]></abbrev-journal-title>
<issn>0035-001X</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Física]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0035-001X2023000300018</article-id>
<article-id pub-id-type="doi">10.31349/revmexfis.69.031602</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Douara]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Rabehi]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
<xref ref-type="aff" rid="Aaf"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Baitiche]]></surname>
<given-names><![CDATA[O.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Tissemsilt University Faculty of Science and Technology ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Université Djillali Liabès de Sidi Bel Abbés Laboratoire de Micro-électronique Appliquée ]]></institution>
<addr-line><![CDATA[Sidi Bel Abbés ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,Ziane Achour University of Djelfa Faculty of Science and Technology ]]></institution>
<addr-line><![CDATA[Djelfa ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af4">
<institution><![CDATA[,Ammar Thlidji University of Laghouat Laboratory of Semi-conductors and Functional materials ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Algeria</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>06</month>
<year>2023</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>06</month>
<year>2023</year>
</pub-date>
<volume>69</volume>
<numero>3</numero>
<fpage>0</fpage>
<lpage>0</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S0035-001X2023000300018&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S0035-001X2023000300018&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S0035-001X2023000300018&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract Here, we study a simulation model of In0.17Al0.83N/GaN passivated high electron mobility transistors (HEMTs) on SiC substrate. The research focused systematically on the effect of AlN interlayer on the electronic and electric characteristics. The 2D-electron gas density of In0.17Al0.83N/AlN/GaN HEMTs is investigated through the dependence on various AlN layer thickness. We report calculations of I-V characteristics, with 1.5 nm AlN thickness. We find the highest maximum output current of 1.81 A/mm at Vgs = 1 V, and more than 450 mS/mm as a transconductance peak. The Results are in agreement with experimental data.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[HEMTs]]></kwd>
<kwd lng="en"><![CDATA[AlN interlayer]]></kwd>
<kwd lng="en"><![CDATA[2D-electron gas]]></kwd>
</kwd-group>
</article-meta>
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