<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0035-001X</journal-id>
<journal-title><![CDATA[Revista mexicana de física]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. mex. fis.]]></abbrev-journal-title>
<issn>0035-001X</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Física]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0035-001X2022000400006</article-id>
<article-id pub-id-type="doi">10.31349/revmexfis.68.041001</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[An empirical model for the Backscattering coefficient of 1-30 keV electrons from thin film targets]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Betka]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
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<xref ref-type="aff" rid="Aaf"/>
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<contrib contrib-type="author">
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<surname><![CDATA[Bentabet]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
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</contrib>
<contrib contrib-type="author">
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<surname><![CDATA[Bouzid]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Djeffal]]></surname>
<given-names><![CDATA[F.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Ferhati]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Azbouche]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Université Sétif 1 Faculté des Sciences Département de Physique]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Université Bordj Bou-Arreridj Laboratoire Caractérisation et Valorisation des Ressources Naturelles ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,University Mostefa Benboulaid-Batna 2 Department of Electronics ]]></institution>
<addr-line><![CDATA[Batna ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af4">
<institution><![CDATA[,Université de Bordj-Bou-Arreridj Laboratoire Matériaux et Systèmes Electroniques ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Algeria</country>
</aff>
<aff id="Af5">
<institution><![CDATA[,Centre de Recherche Nucléaire d&#8217;Alger (CNRA)  ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
<country>Algérie</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>08</month>
<year>2022</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>08</month>
<year>2022</year>
</pub-date>
<volume>68</volume>
<numero>4</numero>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S0035-001X2022000400006&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S0035-001X2022000400006&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S0035-001X2022000400006&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract In this paper, the electron backscattering coefficient for normally incident beams with energy up to 30 keV impinging on thin film targets is stochastically modeled using a Monte Carlo simulation. Accordingly, a generalized model describing the realistic backscattering behavior taking into account both the atomic number and the thickness for energy up to 30 keV is proposed. The obtained results are compared to the experimental and theoretical data, where an excellent agreement is achieved. Moreover, the usefulness of the proposed model as a probe for investigating the electrons backscattered behavior of several materials is thoroughly discussed. It is revealed that the developed model allows identifying the critical thickness of thin film exhibiting the same electron backscattering behavior as that of a semi-infinite solid, which contributes to an accurate assessment of surface properties of various thin-films. The use of our empirical model enables reducing the simulation time as compared to that of complicated Monte Carlo time consuming simulation. Therefore, the presented model can be implemented to accurately determinate the electron backscattering coefficient of various thin-film materials with dissimilar thicknesses, making it appropriate for surface analysis applications.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[Monte-Carlo Calculation]]></kwd>
<kwd lng="en"><![CDATA[backscattering coefficient]]></kwd>
<kwd lng="en"><![CDATA[semi-infinite solid target]]></kwd>
<kwd lng="en"><![CDATA[thin-films]]></kwd>
</kwd-group>
</article-meta>
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<given-names><![CDATA[G]]></given-names>
</name>
<name>
<surname><![CDATA[Gurban]]></surname>
<given-names><![CDATA[S]]></given-names>
</name>
</person-group>
<article-title xml:lang=""><![CDATA[Monte Carlo backscattering yield (BY) calculations applying continuous slowing down approximation (CSDA) and experimental data]]></article-title>
<source><![CDATA[Vacuum]]></source>
<year>2007</year>
<volume>82</volume>
<page-range>201</page-range></nlm-citation>
</ref>
</ref-list>
</back>
</article>
