<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0035-001X</journal-id>
<journal-title><![CDATA[Revista mexicana de física]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. mex. fis.]]></abbrev-journal-title>
<issn>0035-001X</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Física]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0035-001X2020000100091</article-id>
<article-id pub-id-type="doi">10.31349/revmexfis.66.91</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Sensing system with an artificial neural network based on floating-gate metal oxide semiconductor transistors]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[González Vidal]]></surname>
<given-names><![CDATA[J.L.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Reyes-Barranca]]></surname>
<given-names><![CDATA[M.A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Vázquez-Acosta]]></surname>
<given-names><![CDATA[E.N.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Raygoza Panduro]]></surname>
<given-names><![CDATA[J.J.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Universidad Autónoma del Estado de Hidalgo Instituto de Ciencias Básicas e Ingeniería ]]></institution>
<addr-line><![CDATA[Mineral de la Reforma Hidalgo]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Instituto Politécnico Nacional Centro de Investigación y de Estudios Avanzados ]]></institution>
<addr-line><![CDATA[Ciudad de México ]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,Universidad de Guadalajara Facultad de ingeniería ]]></institution>
<addr-line><![CDATA[Guadalajara Jalisco]]></addr-line>
<country>Mexico</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>02</month>
<year>2020</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>02</month>
<year>2020</year>
</pub-date>
<volume>66</volume>
<numero>1</numero>
<fpage>91</fpage>
<lpage>97</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S0035-001X2020000100091&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S0035-001X2020000100091&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S0035-001X2020000100091&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract This paper shows a novel design of a gas sensor system based on artificial neural networks and floating-gate metal oxide semiconductor transistors. Two types of circuits with floating-gate metal oxide semiconductor transistors of minimum dimensions were designed and simulated by Simulink of Matlab; simulations and experimental measurements results were compared, obtaining good expectations. The reason for using floating-gate metal oxide semiconductor is that artificial neural networks can also be implemented with these kinds of devices, since artificial neural networks based on floating-gate metal oxide semiconductors are able to produce pseudo-Gaussian-functions. These functions give a reliable option to determine gas concentration. A sensitive thin film can be deposited on the floating-gate metal oxide semiconductor floating gate, which produces a charge variation due to the chemical reaction between the sensitive layer and the gas species, modifying the threshold voltage thereby a correlation of drain current of the floating-gate metal oxide semiconductor with gas concentration can be obtained. Therefore, a generator circuit was implemented for the pseudo Gaussian signal with the floating-gate metal oxide semiconductor. This system can be applied in environments with dangerous species such as CO2, CO, methane, propane, among others. Simulations demonstrated that the implemented proposal has a good performance as an alternative method for sensing gas concentrations, compared with conventional sensors.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[Gas sensor]]></kwd>
<kwd lng="en"><![CDATA[floating-gate metal oxide semiconductor]]></kwd>
<kwd lng="en"><![CDATA[artificial neural networks]]></kwd>
<kwd lng="en"><![CDATA[opamp]]></kwd>
<kwd lng="en"><![CDATA[83.30.Tv]]></kwd>
<kwd lng="en"><![CDATA[85.40.Bh]]></kwd>
</kwd-group>
</article-meta>
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