<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0035-001X</journal-id>
<journal-title><![CDATA[Revista mexicana de física]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. mex. fis.]]></abbrev-journal-title>
<issn>0035-001X</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Física]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0035-001X2017000100055</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Characterization of highly doped Ga0.86 In0.14As0.13Sb0.87 grown by liquid phase epitaxy]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Díaz-Reyes]]></surname>
<given-names><![CDATA[J.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Galván-Arellano]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Mendoza-Alvarez]]></surname>
<given-names><![CDATA[J.G.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Arias-Cerón]]></surname>
<given-names><![CDATA[J.S.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Herrera-Pérez]]></surname>
<given-names><![CDATA[J.L.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[López-Cruz]]></surname>
<given-names><![CDATA[E.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Instituto Politécnico Nacional Centro de Investigación en Biotecnología Aplicada ]]></institution>
<addr-line><![CDATA[ Tlaxcala]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,IPN Centro de Investigación y de Estudios Avanzados ]]></institution>
<addr-line><![CDATA[Cd. de México ]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,IPN Centro de Investigación y de Estudios Avanzados ]]></institution>
<addr-line><![CDATA[Cd. de México ]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af4">
<institution><![CDATA[,IPN Centro de Investigación y de Estudios Avanzados ]]></institution>
<addr-line><![CDATA[Cd. de México ]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af5">
<institution><![CDATA[,IPN UPIITA ]]></institution>
<addr-line><![CDATA[Cd. de México ]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af6">
<institution><![CDATA[,Benemérita Universidad Autónoma de Puebla  ]]></institution>
<addr-line><![CDATA[Puebla Puebla]]></addr-line>
<country>Mexico</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>02</month>
<year>2017</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>02</month>
<year>2017</year>
</pub-date>
<volume>63</volume>
<numero>1</numero>
<fpage>55</fpage>
<lpage>64</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S0035-001X2017000100055&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S0035-001X2017000100055&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S0035-001X2017000100055&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract Ga0.86In0.14As0.13Sb0.87 layers lattice-matched to (100) Te-GaSb have been grown using the liquid phase epitaxy technique under supercooling conditions. N and p type layers were grown by adding tellurium or zinc in a wide range of molar fraction in the growth solution. By Raman spectroscopy, the structural quality of the epilayers was characterized. The Raman spectra show that the layers become more defective as the dopant molar fraction is increased, n- or p-type. Two main bands are observed in the Raman spectra centered at 230 and 245 cm-1 that depend strongly on the incorporated dopant molar concentration (Te or Zn), which are assigned to the observed vibrational modes of GaAs-like and (GaSb+InAs)-like mixture. The low-temperature photoluminescence of n (or p)-type GaInAsSb was measured as function of dopant concentration added to the melt solution. The photoluminescence spectra were interpreted taking into account the nonparabolicity of the conduction (or valence) band. Both the band filled as well as band tailing effects due to Coulomb interaction of free carriers with ionized impurities and shrinkage due to exchange interaction between free carriers were considered in order to properly be taken into account for the observed features of the photoluminescence spectra. It is shown that the band-to-band transition energy can be used to estimate the free carrier concentration in GaInAsSb for a wide range of dopant concentration.]]></p></abstract>
<abstract abstract-type="short" xml:lang="es"><p><![CDATA[Resumen Capas de Ga0.86In0.14As0.13Sb0.87 con coincidencia de parámetros de red a Te-GaSb (100) han sido crecidas mediante la técnica de epitaxia en fase líquida en condiciones de sobre-enfriamiento. Capas tipo n y p fueron crecidas mediante la adición de teluro y zinc en un amplio rango de fracción molar en la solución de crecimiento. Por espectroscopia Raman, se caracterizó la calidad estructural de los epicapas. Los espectros de Raman muestran que las capas se hacen más imperfectas a medida que aumenta la fracción molar de impurificante, tipo-n o -p. Dos bandas principales se observaron en los espectros Raman centradas en 230 y 245 cm-1 que dependen fuertemente de la concentración molar del impurificante (Te o Zn), que son asignados a los modos de vibración observados de GaAs-like y a la mezcla (GaSb + InAs)-like. La fotoluminiscencia a baja temperatura de GaInAsSb tipo-n (o p) se midió como función de la concentración de impurificante añadido a la solución en estado fundido. Los espectros de fotoluminiscencia se interpretaron teniendo en cuenta la no-parabolicidad de la banda de conducción (o de valencia). Tanto el llenado de la banda, así como los efectos de asimetría de la banda debido a la interacción coulombica de portadores libres con impurezas ionizadas y contracción debido a la interacción de intercambio entre portadores libres fueron considerados para tener debidamente en cuenta las características observadas en los espectros de fotoluminiscencia. Se muestra que la energía de transición de banda a banda puede ser usada para estimar la concentración de portadores libres en GaInAsSb para un amplio rango de concentración de impurificante.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[GaInAsSb semiconductors]]></kwd>
<kwd lng="en"><![CDATA[Liquid phase epitaxy growth]]></kwd>
<kwd lng="en"><![CDATA[Photoluminescence spectroscopy]]></kwd>
<kwd lng="en"><![CDATA[Raman]]></kwd>
<kwd lng="es"><![CDATA[Semiconductores]]></kwd>
<kwd lng="es"><![CDATA[GaInAsSb crecimiento epitaxial en fase líquida]]></kwd>
<kwd lng="es"><![CDATA[espectroscopia de fotoluminiscencia]]></kwd>
<kwd lng="es"><![CDATA[Raman]]></kwd>
</kwd-group>
</article-meta>
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