<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0035-001X</journal-id>
<journal-title><![CDATA[Revista mexicana de física]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. mex. fis.]]></abbrev-journal-title>
<issn>0035-001X</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Física]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0035-001X2016000300223</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Impact of planarized gate electrode in bottom-gate thin-film transistors]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Domínguez]]></surname>
<given-names><![CDATA[M.A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Rosales]]></surname>
<given-names><![CDATA[P.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Torres]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Flores]]></surname>
<given-names><![CDATA[F.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Luna]]></surname>
<given-names><![CDATA[J.A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Alcantara]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Moreno]]></surname>
<given-names><![CDATA[M.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Benemérita Universidad Autónoma de Puebla Instituto de Ciencias Centro de Investigaciones en Dispositivos Semiconductores]]></institution>
<addr-line><![CDATA[ Puebla]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,National Institute for Astrophysics, Optics and Electronics Electronics Department ]]></institution>
<addr-line><![CDATA[ Puebla]]></addr-line>
<country>México</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>06</month>
<year>2016</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>06</month>
<year>2016</year>
</pub-date>
<volume>62</volume>
<numero>3</numero>
<fpage>223</fpage>
<lpage>228</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S0035-001X2016000300223&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S0035-001X2016000300223&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S0035-001X2016000300223&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract In this work, the fabrication of bottom-gate TFTs with unplanarized and planarized gate electrode are reported, as well simulations of the impact of the gate planarization in the TFTs are presented. Previously in literature, a reduction of the contact resistance has been attributed to this planarized structure. In order to provide a physical explanation of this improvement, the electrical performance of ambipolar a-SiGe:H TFTs with planarized gate electrode by Spin-On Glass is compared with unplanarized ambipolar a-SiGe:H TFTs. Then, the properties in the main device interfaces are analyzed by physically-based simulations. The planarized TFTs have better characteristics such as field-effect mobility, on-current, threshold voltage and on/off-current ratio which are consequence of the improved contact resistance.]]></p></abstract>
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<kwd lng="en"><![CDATA[Thin-film transistor]]></kwd>
<kwd lng="en"><![CDATA[hydrogenated amorphous silicon-germanium]]></kwd>
<kwd lng="en"><![CDATA[simulation]]></kwd>
<kwd lng="en"><![CDATA[planarization]]></kwd>
</kwd-group>
</article-meta>
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