Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis

M.A. Dominguez-Jimenez^a*, F. Flores-Gracia^a, A. Luna-Flores^a, J. Martinez-Juarez^a, J.A. Luna-Lopez^a, S. Alcantara-Iniesta^a, P. Rosales-Quintero^b and C. Reyes-Betanzo^b

^a Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla (BUAP), Puebla, 72570, México. * Tel/Fax: (52)(222) 229-55-00 Ext 7876 e-mail: madominguezj@gmail.com.

^b National Institute for Astrophysics, Optics and Electronics, Electronics Department, Luis Enrique Erro No. 1, Puebla, Z.P. 72840, Mexico.

Abstract

The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450°C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas. 70nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO₂ on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250°C showed field-effect mobilities around of 0.05 cm²/Vs and threshold voltages of 8 V.

Keywords: ZnO; electrical properties; thin film transistors.

PACS: 85.30.Tv; 85.30.De

DESCARGAR ARTÍCULO EN FORMATO PDF

References

1. S. Fay, U. Kroll, C. Bucher, E. Vallat-Sauvain and A. Shah, Sol. Energy Mater. Sol. Cells 86 (2005) 385-397.         [ Links ] 

2. S.H. Mohamed and R. Drese, Thin Solid Films 513 (2006) 64­71.         [ Links ] 

3. N. Bouhssira, S. Abed, E. Tomasella, J. Cellier, A. Mosbah, Appl. Surf. Sci. 252 (2006) 5594-5597.         [ Links ]

4. J. Nishii et al., Jpn. J. Appl. Phys. 42 (2003) L347 - L349.         [ Links ]

5. M. Olvera, H. Gómez and A. Maldonado, Sol. Energy Mater. Sol. Cells 91 (2007) 1449-1453.         [ Links ]

6. P. Nunes, B. Fernandes, E. Fortunato, P. Vilarinho, R. Martins, Thin Solid Films 337 (1999) 176-179.         [ Links ]

7. G. Adamopoulos et al., Adv. Funct. Mater, 21 (2011) 525-531.         [ Links ]

8. S. Oertel, M. Jank, E. Teuber, A. Bauer and L. Frey, Thin Solid Films 553 (2014) 114-117.         [ Links ]

9. M. Ortel, Y. Trostyanskaya and V. Wagner, Solid State Electronics 86 (2013) 22-26.         [ Links ]

10. Y. Ming, X. Ling, L. Yu, D. Yan and H. Jing, Chin. Phys. Lett. 28 017302 (2011).         [ Links ]

11 . M. Domínguez, P. Rosales and A. Torres, Solid State Electronics 76 (2012) 44-47.         [ Links ]