Optical, structural and morphological properties of CdS-CdCO3 films
M. Chávez Portilloa, A. Sosa Sáncheza, G. Juárez Díazb*, L. A. Chaltel Limac, S. Cruz Cruzd, R. Gutierrez Pérezc, G. Hernández Téllezc and O. Portillo Morenoc **
a Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla. P. O. Box 1067, Puebla, Pue. 72001 México.
b Facultad de Ciencias de la Computación, Benemérita Universidad Autónoma de Puebla, P. O. Box 1067, Puebla, Pue. 72570 México, * e-mail: j.gabriel@rocketmail.com.
c** Lab. De Ciencias de Materiales, Facultad de Ciencias Químicas, Benemérita Universidad Autónoma de Puebla, P.O. Box 1067, Puebla, Pue. 72001 México, ** e-mail: osporti@yahoo.com.mx.
]]> d Dpto. de Ing. Química, Universidad Politécnica de Tlaxcala, Av. Universidad Politécnica No.1, San Pedro Xalcaltzinco, Tepeyanco, Tlax. México.
Received 28 July 2014;
accepted 12 January 2015
Abstract
CdS-CdCO3 thin films were grown by chemical bath deposition. Different constant deposition temperatures were employed in the range of 20-80°C. From X-ray Diffraction (XRD) results can be observed that intensity of CdS peak is abruptly reduced when deposition temperature is decreased. By SEM images the formation and change in shape and size of crystallites can be observed as temperature is decreased. The forbidden energy band gap was 2.4-4.1 eV, determined from optical absorption. The formation of products was further confirmed with FTIR studies.
Keywords: Deposition temperatures; Gibbs energy; coordination complex; Otavite; morphological.
PACS: 06.60.-c; 61.05.cp; 78.40.-q.
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