Carrier heating effects on transport phenomena in intrinsic semiconductor thin films
G. Gonzalez de la Cruz* and Yu G. Gurevich
Departamento de Física Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Apartado Postal 14–740, México 07000 D.F. México, *e–mail: bato@fis.cinvestav.mx
Recibido el 24 de octubre de 2009
Aceptado el 20 de abril de 2010
Abstract
The excess of nonequilibrium charge carriers due to heating by electric fields influences substantially the electron heat–diffusion and the carrier current density in thin film semiconductors. With the assumption of hole and phonon thermal equilibrium, the current density for electrons and holes and electron heat flux in the semiconductor thin films are calculated analytically taking into account the contribution of the nonequilibrium of carriers and the electron temperature. By using the continuity equations for the carrier densities and energy balance equation with appropriate boundary conditions at the surfaces of the sample, we find that the current density and electron heat flux depend substantially on the size of the sample.
Keywords: Nonequilibrium charge carriers; electron heat diffusion; electron temperature.
Resumen
Exceso de portadores fuera de equilibrio debido campos eléctricos afecta considerablemente el proceso de difusión de calor electrónico y la densidad de corriente en películas delgadas semiconductoras. En la aproximación de equilibrio térmico entre fonones y huecos la densidad de corriente de electrones y huecos y el flujo de calor asociado al sistema electrónico en películas delgadas semiconductoras son calculados analíticamente considerando la temperatura propia del sistema electrónico fuera de equilibrio. Las propiedades de transporte de los portadores cargados fuera de equilibrio en semiconductores son calculados usando la ecuación de continuidad para electrones y huecos y la ecuación de balance de energía con condiciones a la frontera en la superficie de la muestra. Dentro de estas aproximaciones se demuestra que la densidad de corriente y el flujo de energía asociado al sistema electrónico dependen fuertemente de las dimensiones de la muestra.
Descriptores: Portadores cargados fuera de equilibrio; difusión de calor de electrones; temperatura de electrones.
PACS: 05.60.Cd; 72.20.Ht; 73.50.Fq
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Acknowledgments
This work has been partially supported by the Consejo Nacional de Ciencia y Tecnología–Conacyt, México.
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