Bo) calculated from forward bias I-V characteristics was found to increases with increasing temperature. In addition, the value of Rs as a function of both voltage and temperature was obtained from C-V and G-V characteristics. The temperature dependent of I-V, C-V and G-V characteristics confirmed that the distribution the Rs and Nss are important parameters that influence the electrical characteristics of these devices.]]>
MBE–growth and characterization of InxGa1–xAs/GaAs (x=0.15) superlattice
B. Sarikavaka,b, M.K. Öztürka,c, H. Altuntasª, T.S. Mammedovª, S. Altindalª, and S. Özçelikª
ª Department of Physics, University of Gazi 06500 Teknikokullar Ankara–Turkey,
b Department of Physics, Kastamonu University, Kastamonu, Turkey,
c Department of Mineral Analysis and Technology, 06520 Ankara, Turkey.
]]> Recibido el 22 de abril de 2008
Abstract
A qualified In0.15Ga0.85As/GaAs superlattice was grown on an n–type GaAs(100) substrate by molecular beam epitaxy(MBE). Analysis of this structure was first carried out by X–Ray diffraction (XRD) and this structure's the interface thicknesses, roughness and x concentration determined at nanoscale. Secondly, the electrical characteristics of this sample such as the current–voltage–temperature (I–V–T), capacitance–voltage–temperature (C–V–T) and conductance–voltage temperature (G–V–T) were studied over a wide temperature range. The energy distribution of interface states was determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height. Experimental results show that the forward and reverse I–V characteristics are similar to Schottky–junction behavior. The ideality factor n, series resistance Rs, barrier height ΦB and density of interface states Nss were found to be strong functions of temperature. According to thermionic emission (TE) theory, the zero–bias barrier height (
Bo) calculated from forward bias I–V characteristics was found to increases with increasing temperature. In addition, the value of Rs as a function of both voltage and temperature was obtained from C–V and G–V characteristics. The temperature dependent of I–V, C–V and G–V characteristics confirmed that the distribution the Rs and Nss are important parameters that influence the electrical characteristics of these devices.
Keywords: MBE; X–Ray diffraction; series resistance; interface states; temperature dependent.
Resumen
Un cualificado In0.15Ga0.85As/GaAs superenrejado ha sido desarrollado en un substrato de tipo n mediante una epitaxia de viga molecular (MBE). El análisis de esta estructura fue llevado a cabo, en primer lugar por una difracción de rayos X (XRD) y en esta estructura el grosor, la aspereza y la concentración x fueron determinadas del interfaz fueron determinados en una nano–escala. En segundo lugar, las características eléctricas de este ejemplo, tales como la actual temperatura del voltaje (I–V–T), la temperatura del voltaje capacitado (G–V–T) y la temperatura de la conductividad del voltaje (G–V–T) estudiados dentro de un amplio rango de temperaturas. La distribución energética de los estados del interfaz fue determinada de las características I–V del sesgo avanzado, teniendo en cuenta la dependencia diagonal de la altura eficaz de la barrera. Los resultados experimentales muestran como las características avanzadas e inversas I–V son similares al comportamiento de la juntura de Schottky. El factor ideal n, las resistencias en serie Rs, la altura de la barrera y la densidad de los estados del interfaz Nss resultaron ser funciones importantes de la temperatura. Segun la teoría de la emisión termoiónica (TE), la altura de la barrera del sesgo cero, calculada de las características del sesgo avanzado I–V resultaron aumentar con un aumento de la temperatura. Al mismo tiempo, el valor de R y la juntura del voltaje y la temperatura se obtuvieron de las características C–V y G–V. La temperatura dependiente de las características I–V, C–V y G–V confirmaron que la distribución de las R y N son parámetros importantes que influyen en las características eléctricas de estos mecanismos.
Descriptores: MBE; difracción de rayos X; serie de la resistencia; interfaz fueron; temperatura dependiente.
]]>PACS: 78.66.Fd; 81.15.Hi; 78.70.Ck; 73.90.+f
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Acknowledgements
This work is supported by the DPT and the project number is 2001K120590.
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