Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells
I. Rodriguez-Vargas and L.M. Gaggero-Sager
Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa 62210 Cuernavaca, Morelos, México.
Recibido el 26 de marzo de 2004. ]]> Aceptado el 18 de agosto de 2004.
Abstract
We compute the electron level structure (n-type) and the hole subband structure (p-type) of double δ-doped GaAs (DDD) quantum wells, considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order to describe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates that exchange effects are more important in p-type DDD quantum wells than in n-type DDD. Also our results agree with the experimental data available.
Keywords: δ-doped quantum wells; electron and hole states; exchange effects.
Resumen
Calculamos la estructura de niveles electrónicos (tipo-n), así como la de huecos (tipo-p) de pozos cuánticos δ-dopados dobles (DDD) en GaAs. Se han tomando en cuenta los efectos de intercambio en el estudio. Las aproximaciones de Thomas-Fermi (TF) y Thomas-Fermi-Dirac (TFD) han sido implementadas para describir el doblamiento de la banda de conducción y de valencia respectivamente. El estudio de la estructura de niveles electrónicos y de huecos revela que los efectos de muchos cuerpos son mas importantes en los pozos DDD tipo-p que en los DDD tipo-n. De la misma manera nuestros resultados están en buen acuerdo con los datos experimentales disponibles.
Descriptores: Pozos δ-dopados; estructura electrónica; efectos de muchos cuerpos.
]]> PACS: 73.30; 73.61; S5.11
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