<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0035-001X</journal-id>
<journal-title><![CDATA[Revista mexicana de física]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. mex. fis.]]></abbrev-journal-title>
<issn>0035-001X</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Física]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0035-001X2018000600559</article-id>
<article-id pub-id-type="doi">10.31349/revmexfis.64.559</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Electrical transport phenomena in nanostructured porous-silicon films]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Vásquez]]></surname>
<given-names><![CDATA[M. A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Romero-Paredes]]></surname>
<given-names><![CDATA[G.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Peña-Sierra]]></surname>
<given-names><![CDATA[R.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Benemérita Universidad Autónoma de Puebla Facultad de Ciencias de la Electrónica ]]></institution>
<addr-line><![CDATA[ Puebla]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Instituto Politécnico Nacional Centro de Investigación y de Estudios Avanzados Depto. de Ing. Eléctrica]]></institution>
<addr-line><![CDATA[ Ciudad de México]]></addr-line>
<country>Mexico</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>12</month>
<year>2018</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>12</month>
<year>2018</year>
</pub-date>
<volume>64</volume>
<numero>6</numero>
<fpage>559</fpage>
<lpage>565</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S0035-001X2018000600559&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S0035-001X2018000600559&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S0035-001X2018000600559&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract The charge transport mechanisms in nanostructured porous silicon (PS) films were studied through current-voltage (I-V) measurements of planar Au/PS/Au structures in dark conditions at 300 K. The films were formed by electrochemical etching of  1 - 5  &#937;-cm p-type Si (100) wafers producing PS layers of  4.48 ×   10  9  &#937;-cm. The charge transport is limited both by the space charge limited currents (SCLC) and the carrier trapping- detrapping kinetics in the inherent localized PS energy levels. I-V characteristics evolve according to the trapping-detrapping carrier kinetics in the films showing that applying external bias, the electrical current can be controlled. For the first time the trap filling limiting voltage (V   &#8203;  TFL) was identified in PS films that shift between 1 and 3 volts by the carrier trapping-detrapping kinetics from the PS intrinsic defect states. An energy band diagram for the films is schematically depicted including defect states. To give a reasonable explanation of the found behavior the existence of a thin silicon oxide film covering the network-like-silicon-nanocrystallites is required, in agreement with the widely accepted PS film structural models.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[Porous silicon films]]></kwd>
<kwd lng="en"><![CDATA[metal-insulator-metal structures]]></kwd>
<kwd lng="en"><![CDATA[electrical characteristics]]></kwd>
<kwd lng="en"><![CDATA[space charge limited current (SCLC)]]></kwd>
<kwd lng="en"><![CDATA[VTFL]]></kwd>
<kwd lng="en"><![CDATA[electronic transport in interface structures]]></kwd>
<kwd lng="en"><![CDATA[81.07.-b]]></kwd>
<kwd lng="en"><![CDATA[84.37.+q]]></kwd>
<kwd lng="en"><![CDATA[73.40.-c]]></kwd>
<kwd lng="en"><![CDATA[73.40.Rw]]></kwd>
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<source><![CDATA[J. Appl. Phys.]]></source>
<year>2007</year>
<volume>102</volume>
</nlm-citation>
</ref>
</ref-list>
</back>
</article>
