. For those cases where H = B, it would be necessary to replace 
in the Lorentz force and in the ensuing theory.
Hall effect: the role of nonequilibrium charge carriers
S. Molina Valdovinos and Yu. G. Gurevich
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Departamento de Física, Av. IPN 2508, México, D.F., 07360, México, e–mail: smolina@fis.cinvestav.mx
Recibido el 11 de abril de 2011 ]]> Aceptado el 13 de junio de 2011
Abstract
A new model of the Hall effect in the case of a bipolar semiconductor is present. Taking into account the nonequilibrium carriers, thermal generation and recombination processes assisted by traps (Shockley–Read model), the expressions for the electrochemical potential of elec–trons and holes, Hall field and Hall constant RH are obtained. The dependence of these expressions of the distribution of the carriers along the direction of the Hall field in the case of intrinsic and extrinsic semiconductors is studied.
Keywords: Galvanomagnetic phenomena; bipolar semiconductors; recombination; Hall effect.
Resumen
Presentamos un nuevo modelo del efecto Hall en el caso de semiconductores bipolares. Se toma en cuenta portadores fuera de equilibrio, procesos de generación y recombinación asistidos por trampas (modelo de Shockley–Read). Se obtienen expresiónes para los potenciales electroquímicos de electrones y huecos, campo de Hall y constante de Hall RH. Estudiamos la dependencia de estás expresiónes de la distribución de portadores a lo largo de la dirección del campo Hall, en el caso de semiconductores intrínsecos y extrínsecos.
Descriptores: Fenómenos galvanomagneticos; semiconductores bipolares; recombinación; efecto Hall.
]]> PACS: 72.15.Gd; 72.20.My; 72.20.–i
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