<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0035-001X</journal-id>
<journal-title><![CDATA[Revista mexicana de física]]></journal-title>
<abbrev-journal-title><![CDATA[Rev. mex. fis.]]></abbrev-journal-title>
<issn>0035-001X</issn>
<publisher>
<publisher-name><![CDATA[Sociedad Mexicana de Física]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0035-001X2019000100043</article-id>
<title-group>
<article-title xml:lang="es"><![CDATA[Dispositivo láser semiconductor con puntos cúanticos para emisión en el cercano infrarrojo]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[González-Fernández]]></surname>
<given-names><![CDATA[J.V.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Díaz de León-Zapata]]></surname>
<given-names><![CDATA[R.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Lara-Velázquez]]></surname>
<given-names><![CDATA[I.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Ortega-Gallegos]]></surname>
<given-names><![CDATA[J.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Tecnológico Nacional de México Unidad Especializada en Energías Renovables ]]></institution>
<addr-line><![CDATA[Torreón Coahuila]]></addr-line>
<country>México</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Tecnológico Nacional de México  ]]></institution>
<addr-line><![CDATA[Soledad de Graciano Sánchez SLP]]></addr-line>
<country>México</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,Universidad Autónoma de San Luis Potosí Instituto de Investigación en Comunicación Óptica ]]></institution>
<addr-line><![CDATA[San Luis Potosí SLP]]></addr-line>
<country>Mexico</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>02</month>
<year>2019</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>02</month>
<year>2019</year>
</pub-date>
<volume>65</volume>
<numero>1</numero>
<fpage>43</fpage>
<lpage>48</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_arttext&amp;pid=S0035-001X2019000100043&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_abstract&amp;pid=S0035-001X2019000100043&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.mx/scielo.php?script=sci_pdf&amp;pid=S0035-001X2019000100043&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="es"><p><![CDATA[Resumen En este trabajo se reporta la fabricación de un dispositivo láser de semiconductores III-V de confinamiento separado. La heteroestructura se creció usando la técnica de epitaxia por haces moleculares y se caracterizó óptica, topográfica y eléctricamente por medio de fotoluminiscencia, microscopia de tunelamiento, electroluminiscencia, relaciones de corriente-voltaje y corriente-potencia, respectivamente. El confinamiento electrónico es llevado a cabo por un emparedamiento del área activa con pozos cuánticos de InGaAs con una composición que permite un acople estructural entre el pozo cuántico y los puntos cuánticos autoensamblados de InAs disminuyendo las dislocaciones que darían lugar a una mala calidad del dispositivo. El objetivo es obtener una emision láser en las ventanas de menor absorción de las fibras ópticas situadas en el cercano infrarrojo en las que se basan los sistemas de telecomunicación.]]></p></abstract>
<abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract In this work the fabrication of III-V semiconductor laser device with separate confinement is reported. The heterostructure was grown by molecular beam epitaxy technique and it was characterized by optical, morphological and electrical techniques such as photoluminescence, scanning tunneling effect, electroluminescence, current-voltage and current-power relations, respectively. The electronic confinement was carried out by sandwiching the active area with InGaAs quantum well with an appropriated Indium composition that allows a structural coupling between quantum wells and self-assembled InAs quantum dots decreasing dislocations that could commit the device quality. Our aim is to obtain the laser emission in the lower absorption windows for optical fiber telecommunications systems located in the near-infrared.]]></p></abstract>
<kwd-group>
<kwd lng="es"><![CDATA[Puntos cuánticos]]></kwd>
<kwd lng="es"><![CDATA[dispositivos semiconductores]]></kwd>
<kwd lng="es"><![CDATA[epitaxia por haces moleculares]]></kwd>
<kwd lng="es"><![CDATA[láser]]></kwd>
<kwd lng="es"><![CDATA[78.67.Hc]]></kwd>
<kwd lng="es"><![CDATA[42.55.Px]]></kwd>
<kwd lng="es"><![CDATA[81.15.Hi]]></kwd>
<kwd lng="en"><![CDATA[Quantum dots]]></kwd>
<kwd lng="en"><![CDATA[semiconductor devices]]></kwd>
<kwd lng="en"><![CDATA[molecular beam epitaxy]]></kwd>
<kwd lng="en"><![CDATA[laser]]></kwd>
<kwd lng="en"><![CDATA[78.67.Hc]]></kwd>
<kwd lng="en"><![CDATA[42.55.Px]]></kwd>
<kwd lng="en"><![CDATA[81.15.Hi]]></kwd>
</kwd-group>
</article-meta>
</front><back>
<ref-list>
<ref id="B1">
<label>1</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Yin]]></surname>
<given-names><![CDATA[Z.]]></given-names>
</name>
<name>
<surname><![CDATA[Tang]]></surname>
<given-names><![CDATA[X.]]></given-names>
</name>
</person-group>
<source><![CDATA[Solid. State. Electron.]]></source>
<year>2007</year>
<volume>51</volume>
<page-range>6</page-range></nlm-citation>
</ref>
<ref id="B2">
<label>2</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Nakamura]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
</person-group>
<source><![CDATA[Rev. Mod. Phys.]]></source>
<year>2015</year>
<volume>87</volume>
</nlm-citation>
</ref>
<ref id="B3">
<label>3</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Chen]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
</person-group>
<source><![CDATA[Nat. Photonics.]]></source>
<year>2016</year>
<volume>10</volume>
<page-range>307</page-range></nlm-citation>
</ref>
<ref id="B4">
<label>4</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Tilma]]></surname>
<given-names><![CDATA[B.W.]]></given-names>
</name>
</person-group>
<source><![CDATA[Light Sci. Appl.]]></source>
<year>2015</year>
<volume>4</volume>
</nlm-citation>
</ref>
<ref id="B5">
<label>5</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Kuech]]></surname>
<given-names><![CDATA[T.F.]]></given-names>
</name>
</person-group>
<source><![CDATA[Prog. Cryst. Growth Charact. Mater.]]></source>
<year>2016</year>
<volume>62</volume>
<page-range>352</page-range></nlm-citation>
</ref>
<ref id="B6">
<label>6</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Cho]]></surname>
<given-names><![CDATA[A.Y.]]></given-names>
</name>
</person-group>
<source><![CDATA[J. Vac. Sci. Technol.]]></source>
<year>1971</year>
<volume>8</volume>
</nlm-citation>
</ref>
<ref id="B7">
<label>7</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Thompson]]></surname>
<given-names><![CDATA[A.G.]]></given-names>
</name>
</person-group>
<source><![CDATA[Mater. Lett.]]></source>
<year>1997</year>
<volume>30</volume>
<page-range>255</page-range></nlm-citation>
</ref>
<ref id="B8">
<label>8</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Sta&#324;czyk]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
</person-group>
<source><![CDATA[Appl. Phys. Lett.]]></source>
<year>2013</year>
<volume>103</volume>
</nlm-citation>
</ref>
<ref id="B9">
<label>9</label><nlm-citation citation-type="book">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Dutton]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
</person-group>
<source><![CDATA[Understanding Optical Communications]]></source>
<year>1998</year>
<edition>1</edition>
<page-range>30-3</page-range><publisher-loc><![CDATA[Durham, North Carolina, USA ]]></publisher-loc>
<publisher-name><![CDATA[Prentice Hall PTR]]></publisher-name>
</nlm-citation>
</ref>
<ref id="B10">
<label>10</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Liu]]></surname>
<given-names><![CDATA[H.Y.]]></given-names>
</name>
</person-group>
<source><![CDATA[Appl. Phys. Lett.]]></source>
<year>2004</year>
<volume>85</volume>
</nlm-citation>
</ref>
<ref id="B11">
<label>11</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Ledentsov]]></surname>
<given-names><![CDATA[N.N.]]></given-names>
</name>
</person-group>
<source><![CDATA[IEEE J. Sel. Top. Quantum Electron.]]></source>
<year>2000</year>
<volume>6</volume>
<page-range>439</page-range></nlm-citation>
</ref>
<ref id="B12">
<label>12</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Bimberg]]></surname>
<given-names><![CDATA[D.]]></given-names>
</name>
</person-group>
<source><![CDATA[Thin Solid Films]]></source>
<year>2000</year>
<volume>367</volume>
<page-range>235</page-range></nlm-citation>
</ref>
<ref id="B13">
<label>13</label><nlm-citation citation-type="confpro">
<person-group person-group-type="author">
<name>
<surname><![CDATA[González-Fernández]]></surname>
<given-names><![CDATA[J.V.]]></given-names>
</name>
</person-group>
<source><![CDATA[IEEExPO 2009]]></source>
<year>2009</year>
<conf-name><![CDATA[ 3rd Conf. Univ. Guanajuato IEEE Students Chapter]]></conf-name>
<conf-loc> </conf-loc>
</nlm-citation>
</ref>
<ref id="B14">
<label>14</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Ustinov]]></surname>
<given-names><![CDATA[V.M.]]></given-names>
</name>
</person-group>
<source><![CDATA[Appl. Phys. Lett.]]></source>
<year>1999</year>
<volume>74</volume>
</nlm-citation>
</ref>
<ref id="B15">
<label>15</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Cheng]]></surname>
<given-names><![CDATA[H.]]></given-names>
</name>
</person-group>
<source><![CDATA[Appl. Phys. Lett.]]></source>
<year>2015</year>
<volume>106</volume>
</nlm-citation>
</ref>
<ref id="B16">
<label>16</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Liu]]></surname>
<given-names><![CDATA[A.Y.]]></given-names>
</name>
</person-group>
<source><![CDATA[Appl. Phys. Lett.]]></source>
<year>2014</year>
<volume>104</volume>
</nlm-citation>
</ref>
<ref id="B17">
<label>17</label><nlm-citation citation-type="">
<person-group person-group-type="author">
<name>
<surname><![CDATA[Uvin]]></surname>
<given-names><![CDATA[S.]]></given-names>
</name>
</person-group>
<source><![CDATA[Opt. Express]]></source>
<year>2018</year>
<volume>26</volume>
</nlm-citation>
</ref>
</ref-list>
</back>
</article>
